M. Lesecq

发表

Resistive Nickel Temperature Sensor Integrated Into Short-Gate Length AlGaN/GaN HEMT Dedicated to RF Applications

H. Maher, A. Cutivet, J. De Jaeger, 2018, IEEE Electron Device Letters.

AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(111) for RF Applications

M. Portail, Y. Cordier, M. Bah, 2022, Materials Science Forum.

Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon

M. Khoury, Y. Cordier, J. De Jaeger, 2018 .

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

Y. Cordier, V. Hoel, F. Lecourt, 2015, IEEE Electron Device Letters.

Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer

J. Tartarin, Y. Guhel, B. Boudart, 2021, Microwave and Optical Technology Letters.

High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape

V. Hoel, E. Pichonat, J. De Jaeger, 2011, IEEE Electron Device Letters.

First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

Y. Cordier, B. Damilano, V. Hoel, 2016, IEEE Electron Device Letters.

Optimization of ${\rm Al}_{0.29}{\rm Ga}_{0.71}{\rm N}/{\rm GaN}$ High Electron Mobility Heterostructures for High-Power/Frequency Performances

Y. Cordier, S. Chenot, V. Hoel, 2013, IEEE Transactions on Electron Devices.

Large-signal modeling up to W-band of AlGaN/GaN based high-electron-mobility transistors

V. Hoel, H. Maher, A. Cutivet, 2015, 2015 10th European Microwave Integrated Circuits Conference (EuMIC).

150-GHz RF SOI-CMOS Technology in Ultrathin Regime on Organic Substrate

E. Dubois, F. Danneville, D. Gloria, 2011, IEEE Electron Device Letters.

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

J. Brault, Y. Cordier, S. Chenot, 2018, IEEE Photonics Technology Letters.

Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies

Y. Cordier, D. Valente, M. Bah, 2020, Scientific Reports.

On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

K. Radhakrishnan, J. Mateos, T. González, 2023, IEEE Transactions on Electron Devices.

GaN-based SSD structure for THz applications

K. Radhakrishnan, C. Gaquière, J. Mateos, 2019, 2019 IEEE Asia-Pacific Microwave Conference (APMC).

Design and Fabrication of Planar Gunn Nanodiodes Based on Doped GaN

K. Radhakrishnan, C. Gaquière, J. Mateos, 2019, 2019 IEEE Asia-Pacific Microwave Conference (APMC).

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

M. Portail, Y. Cordier, F. Vaurette, 2023, Microelectronic Engineering.

2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Y. Cordier, J. Tartarin, J. De Jaeger, 2019, Semiconductor Science and Technology.

All-optical tunability of InGaAsP/InP microdisk resonator by infrared light irradiation.

J. Vilcot, B. Pinchemel, S. Maricot, 2007, Optics letters.

Fabrication, and Direct Current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

N. Idir, Y. Cordier, J. De Jaeger, 2023, Journal of Vacuum Science & Technology B.

A converging route towards very high frequency, mechanically flexible, and performance stable integrated electronics

Emmanuel Dubois, Daniel Gloria, Francois Danneville, 2013 .

Radio-frequency and low noise characteristics of SOI technology on plastic for flexible electronics

Emmanuel Dubois, Daniel Gloria, Francois Danneville, 2013 .

Impact of the Bending on the Electroluminescence of Flexible InGaN/GaN Light-Emitting Diodes

J. Brault, Y. Cordier, S. Chenot, 2016, IEEE Photonics Technology Letters.