G. Krötz

发表

Ecological light measurement in forests using the light degradation effect in hydrogenated amorphous silicon (a-Si:H)

C. Ammer, G. Krötz, 1997 .

Writing electronically active nanometer‐scale structures with a scanning tunneling microscope

E. Hartmann, R. Behm, F. Koch, 1991 .

Accumulation and annealing of implantation damage in a-Si:H

G. Müller, G. Krötz, H. Stitzl, 1991 .

Rapid plasma etching of cubic SiC using NF3/O2 gas mixtures

M. Eickhoff, C. Richter, G. Krötz, 1997 .

Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon

G. Müller, S. Kalbitzer, G. Krötz, 1992 .

Heteroepitaxial growth of 3C-SiC on SOI for sensor applications

M. Eickhoff, S. Zappe, E. Obermeier, 1999 .

Density-of-state distribution and variable-range hopping transport in amorphous silicon prepared by ion bombardment

G. Müller, G. Krötz, B. Ruttensperger, 1993 .

Etching characteristics and mechanical properties of a-SiC:H thin films

M. Eickhoff, D. Schmitt-Landsiedel, U. Schmid, 2001 .

Dopant-defect interactions in hydrogen-free amorphous silicon

B. Dobson, A. Dent, G. Müller, 1996 .

Reversible and irreversible structural changes in amorphous silicon

G. Müller, G. Greaves, S. Kalbitzer, 1994 .

Experimental tests of the autocompensation model of doping

G. Müller, J. Wind, S. Kalbitzer, 1991 .

Preparation-dependent relaxation in n-type a-Si:H

G. Müller, J. Wind, G. Krötz, 1989 .

Oxidation Dependence on Defect Density in 3C-SiC Films

M. Eickhoff, N. Vouroutzis, J. Stoemenos, 2001 .

Autocompensation doping in light-soaked and in radiation-damaged a-Si:H

G. Müller, G. Krötz, H. Stitzl, 1991 .

Pseudomorphic growth of SixGe1-x on GaAs(110)

G. Abstreiter, K. Eberl, T. Wolf, 1987 .

Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors

S. Rushworth, G. Müller, W. Legner, 1995 .

Structural equilibration in intrinsic, single-doped and compensated TFTs-experiments and calculations

G. Müller, G. Krötz, 1991 .

Defects and impurities in amorphous semiconductors and in liquid electrolytes

G. Müller, G. Krötz, 1992 .

Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon

G. Krötz, P. A. Stolk, W. F. van der Weg, 1994 .

High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step

M. Eickhoff, G. Krötz, H. Möller, 1999 .

The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD

M. Eickhoff, J. Stoemenos, G. Krötz, 1999 .

Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer

S. Zappe, E. Obermeier, W. Skorupa, 1999 .

Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy

M. Eickhoff, J. Stoemenos, G. Krötz, 1999 .

Confined optical modes in short period (110) Si/Ge superlattices

G. Abstreiter, K. Eberl, H. Brugger, 1989 .

Combustion Pressure Based Engine Management System

Martin Eickhoff, Anthony Truscott, Claudio Cavalloni, 2000 .

The Application and Evaluation of a Novel Engine Management System Based on Intelligent Control and Diagnostics Algorithms and Utilising Innovative Sensor Technology

Rainer Müller, Anthony Truscott, Andrew Noble, 1999 .

Amorphous silicon-germanium diodes for optical detection

P. Deimel, G. Müller, J. Wind, 1989 .

High—temperature Sensors Based on SiC and Diamond Technology

Martin Eickhoff, G. Krötz, Paul R. Chalker, 1999 .

Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator

M. Eickhoff, J. Stoemenos, G. Krötz, 2001 .

High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor

Ernst Obermeier, G. Krötz, H. Möller, 1999 .