Tong Zhao

发表

Effects of co-doping nitrogen and germanium on dislocation gliding in Czochralski silicon: Implication for improving mechanical strength

Xiangyang Ma, Deren Yang, Yuxin Sun, 2020 .

The effect and mechanism of current injection to suppress light and elevated temperature induced degradation in p-type cast-mono and multicrystalline silicon Passivated Emitter and Rear cells

Qiyuan He, Deren Yang, Xuegong Yu, 2022, Solar Energy.

Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon

Xiangyang Ma, Deren Yang, Wu Lan, 2022, Journal of Applied Physics.

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping.

Xiangyang Ma, Deren Yang, L. Fan, 2022, ACS applied materials & interfaces.

Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal

Xiangyang Ma, Deren Yang, Wu Lan, 2021, Applied Physics A.

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

Xiangyang Ma, Deren Yang, Yuxin Sun, 2019, Silicon.

Ultrafast growth of nanocrystalline graphene films by quenching and grain-size-dependent strength and bandgap opening

Hui‐Ming Cheng, W. Ren, Chuan Xu, 2019, Nature Communications.

Recent Advances in Electromechanical Imaging on the Nanometer Scale: Polarization Dynamics in Ferroelectrics, Biopolymers, and Liquid Imaging

Sergei V. Kalinin, R. Ramesh, B. Rodriguez, 2007 .

On the mechanism underlying the elimination of nitrogen-oxygen shallow thermal donors in nitrogen-doped Czochralski silicon at elevated temperatures

Xiangyang Ma, Deren Yang, Yunhao Lu, 2021 .

Revisiting the effects of carbon-doping at 1017 cm−3 level on dislocation behavior of Czochralski silicon: from room temperature to elevated temperatures

Xiangyang Ma, Deren Yang, Xuegong Yu, 2019, Journal of Materials Science: Materials in Electronics.

Improved Surface Passivation of Rear SiN x /AlO x Stacks in p‐Type Boron‐Doped Czochralski Silicon Wafers During Dark Annealing at Elevated Temperatures

Deren Yang, Xuegong Yu, Yuxin Yao, 2022, physica status solidi (a).