Joon-min Park

Surface characteristics of a porous-surfaced Ti-6Al-4V implant fabricated by electro-discharge-compaction

J. W. Park, D. Puleo, W. Lee, 2000 .

Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

D. Ahn, S. Nam, D. Ko, 2015 .

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW

Ki-Whan Song, Young-Hyun Jun, Jaewhan Kim, 2011, 2011 IEEE International Solid-State Circuits Conference.

Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

D. Ahn, D. Ko, Wu Zhe, 2016 .

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Byung-Gil Choi, Hye-Jin Kim, Chang-Soo Lee, 2008, IEEE Journal of Solid-State Circuits.