S. Ri

发表

Carrier transport of diamond p+‐i‐n+ junction diode fabricated using low‐resistance hopping p+ and n+ layers

S. Yamasaki, H. Okushi, D. Takeuchi, 2011 .

Flattening of oxidized diamond (111) surfaces with H2SO4/H2O2 solutions

K. Yamabe, S. Yamasaki, H. Okushi, 2009 .

Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p–n junction

S. Yamasaki, H. Okushi, H. Watanabe, 2006 .

Electrical characterization of homoepitaxial diamond p-n+ junction

H. Okushi, T. Makino, Y. G. Chen, 2005 .

Device-grade homoepitaxial diamond film growth

H. Okushi, S. Yamanaka, D. Takeuchi, 2002 .

Temperature evolution of photocurrent spectra in undoped and boron-doped homoepitaxial CVD diamond film

S. Yamasaki, H. Okushi, D. Takeuchi, 2006 .

Recovery of negative electron affinity by annealing on (111) oxidized diamond surfaces

S. Yamasaki, D. Takeuchi, N. Tokuda, 2009 .

Fermi level pinning-free interface at metals/homoepitaxial diamond (111) films after oxidation treatments

S. Yamasaki, H. Okushi, D. Takeuchi, 2008 .

Surface electronic properties on boron doped (111) CVD homoepitaxial diamond films after oxidation treatments

S. Yamasaki, H. Okushi, D. Takeuchi, 2007 .

Surface conductive layers on (111) diamonds after oxygen treatments

S. Yamasaki, H. Okushi, B. Rezek, 2006 .

Surface conductive layers on oxidized (111) diamonds

S. Yamasaki, H. Okushi, B. Rezek, 2005 .

Dependence of NO2 Gas on Schottky Diode Capacitance Fabricated by Using Diamond Thin Films

T. Kurosu, M. Iida, H. Kimura, 2001 .

Correlation Between Defects and Electrical Conduction in Surface Conductive Layer of CVD-diamond Films

Yukio Akiba, T. Kurosu, M. Iida, 1996 .

Epitaxial growth of nonpolar ZnO and n-ZnO/i-ZnO/p-GaN heterostructure on Si(001) for ultraviolet light emitting diodes

T. Nagata, T. Chikyow, K. Ishibashi, 2014 .

Epitaxial growth of high dielectric constant lead-free relaxor ferroelectric for high-temperature operational film capacitor

T. Nagata, T. Chikyow, S. Kumaragurubaran, 2015 .

Secondary photoelectron emission experiments on p-, intrinsic, and n-type diamond

S. Yamasaki, D. Takeuchi, C. Nebel, 2006 .

Total photoyield experiments on hydrogen terminated n-type diamond

S. Yamasaki, D. Takeuchi, C. Nebel, 2005 .

Negative electron affinity on hydrogen terminated diamond

D. Takeuchi, C. Nebel, H. Kato, 2005 .

Exciton-derived Electron Emission from (001) Diamond p–n Junction Diodes with Negative Electron Affinity

S. Yamasaki, H. Okushi, D. Takeuchi, 2008 .

Electron emission suppression from hydrogen-terminated n-type diamond

S. Yamasaki, H. Okushi, D. Takeuchi, 2008 .

Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling

S. Shikata, H. Umezawa, M. Ogura, 2006 .

High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p–i–n Junction

S. Yamasaki, H. Okushi, H. Watanabe, 2006 .

Interface stability of electrode/Bi-containing relaxor ferroelectric oxide for high-temperature operational capacitor

T. Nagata, T. Chikyow, Seungjun Oh, 2016 .

BaTiO3 based relaxor ferroelectric epitaxial thin-films for high-temperature operational capacitors

T. Nagata, T. Chikyow, S. Kumaragurubaran, 2014 .

Roughening of atomically flat diamond (111) surfaces by a hot HNO3/H2SO4 solution

K. Yamabe, S. Yamasaki, H. Okushi, 2008 .

Combinatorial synthesis of BaTiO3–Bi(Mg2/3Nb1/3)O3 thin-films for high-temperature capacitors

T. Nagata, T. Chikyow, S. Kumaragurubaran, 2015 .

Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001)

H. Kawarada, A. Hiraiwa, S. Kono, 2019, Diamond and Related Materials.

Misorientation angle dependence of surface morphology in homoepitaxial diamond film growth at a low CH4/H2 ratio

H. Okushi, S. Yamanaka, H. Watanabe, 2002 .

Study of dislocations in strained-Si/Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques

T. Sekiguchi, S. Ito, Xiaoli Yuan, 2004 .

High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers

S. Yamasaki, H. Okushi, D. Takeuchi, 2009 .

Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2

S. Ito, Y. Sakuma, J. Niitsuma, 2005 .

Muon spin relaxation in CVD polycrystalline diamond film

H. Okushi, H. Watanabe, D. Takeuchi, 2004 .

Atomically flat diamond (111) surface formation by homoepitaxial lateral growth

K. Yamabe, S. Yamasaki, H. Okushi, 2008 .

Electrical and light-emitting properties of (001)-oriented homoepitaxial diamond p–i–n junction

S. Yamasaki, H. Okushi, H. Watanabe, 2007 .

Detection of misfit dislocations at interface of strained Si/Si0.8Ge0.2 by electron-beam-induced current technique

S. Ito, T. Sekiguchi, Xiaoli Yuan, 2004 .

Structural properties of sulfur-implanted diamond single crystals

H. Okushi, S. Yamanaka, H. Watanabe, 2000, 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).

Homoepitaxial diamond p–n+ junction with low specific on-resistance and ideal built-in potential

S. Yamasaki, H. Okushi, T. Makino, 2008 .

Leakage current analysis of diamond Schottky barrier diodes operated at high temperature

Takeyasu Saito, Hitoshi Umezawa, Shinichi Shikata, 2007 .

Strong Excitonic Emission from (001)-Oriented Diamond P–N Junction

Toshiharu Makino, Hideyo Okushi, Satoshi Yamasaki, 2005 .

Electrical and optical characterization of boron-doped (111) homoepitaxial diamond films

S. Yamasaki, H. Okushi, H. Watanabe, 2005 .

Growth and characterization of boron-doped ( 1 1 1 ) CVD homoepitaxial diamond films

S. Yamasaki, H. Okushi, H. Watanabe, 2007 .

Heteroepitaxial growth of nonpolar Cu-doped ZnO thin film on MnS-buffered (100) Si substrate

T. Nagata, T. Chikyow, Tatsuru Nakamura, 2015 .

Fabrication of Nitrogen-Doped Diamond Field Emitter Utilizing Porous Silicon and Molding Technique

T. Kurosu, M. Iida, Hideo Kiyota, 2000 .