K. Jang

发表

Passivation Effects of 100 nm In0.4AlAs/In0.35GaAs Metamorphic High-Electron-Mobility Transistors with a Silicon Nitride Layer by Remote Plasma-Enhanced Chemical Vapor Deposition

K. Seo, Gyungseon Seol, S. W. Kim, 2007 .

A 1.1V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for Security and Reliability Enhancement

Sangil Park, Jonghwan Kim, K. Jang, 2023, 2023 IEEE International Solid- State Circuits Conference (ISSCC).