S. Baek

Ultrashallow Junction Formation Using Novel Plasma Doping Technology beyond 50 nm MOS Devices

H. Hwang, W. Cho, Seongjae Lee, 2005 .

Sub-15 nm n+/p-germanium shallow junction formed by PH3 plasma doping and excimer laser annealing

H. Hwang, Jong-Ho Lee, M. Hasan, 2006 .

Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance

W. Cho, I. Baek, C. Ahn, 2004, 2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573).

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal-oxide-semiconductor field-effect transistors

H. Hwang, H. Chang, S. Tavakoli, 2005 .

Characteristics of HfO/sub 2/ pMOSFET prepared by B/sub 2/H/sub 6/ plasma doping and KrF excimer laser annealing

H. Hwang, S. Heo, S. Baek, 2005 .

Effect of low-temperature preannealing on laser-annealed p+/n ultrashallow junctions

H. Hwang, S. Baek, Taesung Jang, 2002 .

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

Hyunsang Hwang, Sanghun Jeon, Sangmoo Choi, 2005 .

Low temperature activated Ga and Sb ion-implanted shallow junctions

H. Hwang, S. Tavakoli, S. Baek, 2004, The Fourth International Workshop on Junction Technology, 2004. IWJT '04..

Effects of High-Pressure Deuterium Annealing on Nonvolatile Memory Device with Silicon Nanocrystals Embedded in Silicon Nitride

H. Hwang, S. Jeon, Sangmoo Choi, 2005 .