Jingnan Gao

Split-Gate-Enhanced Power UMOSFET With Soft Reverse Recovery

Ying Wang, Hai-fan Hu, Yun-Tao Liu, 2013, IEEE Transactions on Electron Devices.

Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask

C. Wen, Maojun Wang, B. Xie, 2018, IEEE Transactions on Electron Devices.

Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers

Kevin J. Chen, C. Wen, Wengang Wu, 2017, IEEE Electron Device Letters.

2D Material and Perovskite Heterostructure for Optoelectronic Applications

Xinyi Zhou, Yuljae Cho, Jingnan Gao, 2022, Nanomaterials.

Low ON-Resistance GaN Schottky Barrier Diode With High $V_{\mathrm{ON}}$ Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology

Yilong Hao, Yufeng Jin, Cheng P. Wen, 2018, IEEE Electron Device Letters.

Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage

C. Wen, Wengang Wu, Maojun Wang, 2017, IEEE Electron Device Letters.