M. Haneda

Further Enhancement of Electro-migration Resistance by Combination of Self-aligned Barrier and Copper Wiring Encapsulation Techniques for 32-nm Nodes and Beyond

T. Suzuki, T. Sugii, H. Kitada, 2008, 2008 International Interconnect Technology Conference.

Ultrathin Barrier Formation Using Combination of Manganese Oxide Encapsulation and Self-Aligned Copper Silicon Nitride Barriers for Copper Wiring in Future LSI Interconnects

Y. Nara, H. Kitada, T. Owada, 2011, IEEE Transactions on Electron Devices.

Growth behavior of self-formed barrier at Cu–Mn∕SiO2 interface at 250–450°C

J. Koike, M. Haneda, J. Iijima, 2007 .

Cu Alloy Metallization for Self-Forming Barrier Process

M. Wada, J. Koike, M. Haneda, 2006, 2006 International Interconnect Technology Conference.

Growth kinetics and thermal stability of a self-formed barrier layer at Cu-Mn∕SiO2 interface

Junichi Koike, K. Neishi, J. Koike, 2007 .

Impacts of Misalignment on 1μm Pitch Cu-Cu Hybrid Bonding

H. Iwamoto, H. Hashiguchi, Y. Kagawa, 2020, 2020 IEEE International Interconnect Technology Conference (IITC).

Growth Behavior of Self-Formed Barrier Using Cu-Mn Alloys at 350 to 600oC

J. Koike, M. Haneda, J. Iijima, 2006, 2006 International Interconnect Technology Conference.