Y. Chen

Study of NBTI Stress in P+-Poly PMOSFETs with Gate Oxides Grown on Nitrogen Implanted Si Substrates

D. Kwong, M. Gardner, J. Fulford, 1998, 28th European Solid-State Device Research Conference.

Ultra thin (<20 /spl Aring/) CVD Si/sub 3/N/sub 4/ gate dielectric for deep-sub-micron CMOS devices

D. Kwong, S. Song, H. Luan, 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).