M. Morris

Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon

B. Obradovic, Geng Wang, P. Zeitzoff, 1996, Journal of Technology Computer Aided Design TCAD.

A detailed physical model for ion implant induced damage in silicon

S. J. Morris, S. Tian, Charles M. Snell, 1998 .

Monte Carlo simulation of ion implantation damage process in silicon

B. Obradovic, A. Tasch, S. Tian, 1996, International Electron Devices Meeting. Technical Digest.

Comparisons of UT-MARLOWE predictions of implant-induced damage with experimentally measured amorphous layer thicknesses

B. Obradovic, A. Tasch, S.‐H. Yang, 1996, Proceedings of 11th International Conference on Ion Implantation Technology.

Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach

B. Obradovic, A. Tasch, S. Tian, 1996 .

The impact of crystal cut error on the measured impurity profiles resulting from ion implantation

B. Obradovic, Al F. Tasch, Ying-Chen Chen, 2000 .