Teruyuki Shimura

A 1-GHz band low-power dissipation GaAs prescaler IC

Kosei Maemura, Teruyuki Shimura, 1988 .

A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT (Special Issue on High-Frequency/speed Devices in the 21st Century)

Kazutomi Mori, Tadashi Takagi, Yukio Ikeda, 1999 .

3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology

Takeshi Miura, Kazuya Yamamoto, Nobuyuki Ogawa, 2007, IEICE Trans. Electron..

A GSM/EDGE Dual-Mode, Triple-Band InGaP HBT MMIC Power Amplifier Module

Takeshi Miura, Satoshi Suzuki, Tomoyuki Asada, 2005, IEICE Trans. Electron..

in Multi-Finger High Power HBTs

Manabu Kato, Saburo Takamiya, Teruyuki Shimura, 1995 .

A 2.5-V Low-Reference-Voltage, 2.8-V Low-Collector-Voltage Operation, HBT Power Amplifier for 0.8-0.9-GHz Broadband CDMA Applications

Atsushi Okamura, Naohito Yoshida, Teruyuki Shimura, 2009, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.

Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response

Satoshi Suzuki, Tomoyuki Asada, Kazuya Yamamoto, 2017, IEICE Trans. Electron..

1 W Ku-band AlGaAs/GaAs power HBTs with 72% peak power-added efficiency

Katsuya Kosaki, Hiroshi Matsuoka, J. Udomoto, 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).

A WCDMA Multiband Power Amplifier Module With Si-CMOS/GaAs-HBT Hybrid Power-Stage Configuration

Kazuya Yamamoto, Morishige Hieda, Fumimasa Kitabayashi, 2016, IEEE Transactions on Microwave Theory and Techniques.

Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy

Etsuji Omura, Teruyuki Shimura, Miyo Miyashita, 1994 .

1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiency

H. Nakano, Katsuya Kosaki, Hiroshi Matsuoka, 1995 .