A. E. Morgan

发表

Effect of post‐silicidation annealing on TiSi2/p+‐n Si junctions

E. Broadbent, D. Sadana, M. Delfino, 1987 .

Effect of oxygen implantation upon secondary ion yields

H. J. Tolle, A. E. Morgan, H. D. Grefte, 1981 .

Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing

E. Broadbent, D. Sadana, B. Burrow, 1988 .

Characterization of a Self‐Aligned Cobalt Silicide Process

E. Broadbent, D. Sadana, M. Delfino, 1987 .

Annealing and oxidation behavior of low-pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

D. Sadana, M. Norcott, A. E. Morgan, 1987 .

Reaction of titanium with silicon nitride under rapid thermal annealing

E. Broadbent, D. Sadana, A. E. Morgan, 1986 .

Range distributions of 11B+ in Co, CoSi2, Ti, and TiSi2

E. Broadbent, M. Delfino, A. E. Morgan, 1988 .

Formation and high‐temperature stability of CoSix films on an SiO2 substrate

E. Broadbent, K. Ritz, A. E. Morgan, 1990 .

Material characterization of plasma‐enhanced chemical vapor deposited titanium silicide

W. Stacy, A. E. Morgan, J. M. Blasi, 1986 .

The influence of bombardment conditions upon the sputtering and secondary ion yields of silicon

N. Warmoltz, H. Werner, H. J. Tolle, 1981 .

A correlation of Auger electron spectroscopy, x‐ray photoelectron spectroscopy, and Rutherford backscattering spectrometry measurements on sputter‐deposited titanium nitride thin films

B. Burrow, A. E. Morgan, R. Ellwanger, 1986 .

Shallow junction formation by preamorphization with tin implantation

D. Sadana, M. Delfino, A. E. Morgan, 1986 .

Growth of Selective Tungsten on Self‐Aligned Ti and PtNi Silicides by Low Pressure Chemical Vapor Deposition

E. Broadbent, D. Sadana, B. Burrow, 1986 .

Gettering of copper in silicon-on-insulator structures formed by oxygen ion implantation

M. Delfino, C. Vorst, A. E. Morgan, 1987 .

Growth of selective tungsten films on self‐aligned CoSi2 by low pressure chemical vapor deposition

E. Broadbent, D. Sadana, A. E. Morgan, 1986 .

Growth of Selective Tungsten on Self-Aligned Ti and PtNi Silicides by Low Pressure Chemical Vapor Deposition.

E. Broadbent, D. Sadana, B. Burrow, 1986 .

The high‐temperature stability of chemically vapor‐deposited tungsten‐silicon couples rapid thermal annealed in ammonia and argon

E. Broadbent, D. Sadana, B. Burrow, 1988 .

Formation of TiN/TiSi2/p+-Si/n-Si by rapid thermal annealing (RTA) silicon implanted with boron through titanium

M. Delfino, E. Broadbent, B. Burrow, 1985, IEEE Electron Device Letters.

Formation of β‐SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate

Ki-Bum Kim, Y. Ku, A. Kermani, 1990 .

Application of self-aligned CoSi/sub 2/ interconnection in submicrometer CMOS transistors

E. Broadbent, A. E. Morgan, P. Maillot, 1989 .

Measurement of boron segregation at the SiO2/Si interface using SIMS

D. A. Reed, J. Baker, A. E. Morgan, 1984 .

Depth profiling of As at the SiO2/Si interface using secondary ion mass spectrometry

A. E. Morgan, P. Maillot, 1987 .

SIMS Measurements of As at the SiO2/Si Interface

J. Baker, A. E. Morgan, C. Loxton, 1986 .

A thermodynamic approach for interpreting metallization layer stability and thin‐film reactions involving four elements: Application to integrated circuit contact metallurgy

R. Sinclair, A. E. Morgan, A. Bhansali, 1990 .