M. Noh

Effect of Si delta doping on the luminescence properties of InP/InAlP quantum dots

R. D. Heller, N. Holonyak, R. Dupuis, 2003 .

Effect of the InAlGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition

R. D. Heller, N. Holonyak, R. Dupuis, 2003 .

A critical factor affecting on the performance of blue-violet InGaN multiquantum well laser diodes: Nonradiative centers

D. H. Nguyen, K. Yee, Jongsung Park, 2010 .

Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition

R. D. Heller, N. Holonyak, R. Dupuis, 2003 .

Optimizing the growth of vertically stacked InP/In/sub 0.5/Al/sub 0.3/Ga/sub 0.2/P quantum dots by metalorganic chemical vapor deposition

R. D. Heller, N. Holonyak, R. Dupuis, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Band lineup of pseudomorphic GaAs1−xSbx quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition

R. Dupuis, J. Ryou, M. Noh, 2006 .

An analysis of transient thermal properties for high power GaN‐based laser diodes

Young-Jin Kim, SeungTaek Kim, Jongseok Kim, 2010 .

Properties of Defective Regions Observed by Photoluminescence Imaging for GaN-Based Light-Emitting Diode Epi-Wafers

HyungTae Kim, SeungTaek Kim, Jongseok Kim, 2015 .

Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers.

K. Yee, Y. Jang, D. Lee, 2010, Optics express.

Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures

H. Ryu, Jong-Moo Lee, J. Shim, 2011, IEEE Photonics Technology Letters.