Y. N. Chen

Tri-Level Resistive Switching in Metal-Nanocrystal-Based $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiO}_{2}$ Gate Stack

S. Mahapatra, K. Pey, P. K. Singh, 2010, IEEE Transactions on Electron Devices.

Study of the charge leakage of dual layer Pt metal nanocrystal-based high-κ/SiO2 flash memory cell - a relaxation current point of view

S. Mahapatra, K. Pey, P. K. Singh, 2011, 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).

Charging and discharging characteristics of metal nanocrystals in degraded dielectric stacks

S. Mahapatra, K. Pey, P. K. Singh, 2010, 2010 IEEE International Reliability Physics Symposium.

Physical analysis of breakdown in high-κ/metal gate stacks using TEM/EELS and STM for reliability enhancement (invited)

T. Kauerauf, X. Wu, K. Pey, 2011 .

Effect of grain boundary on electrical properties of polycrystalline lanthanum nickel oxide thin films

H. L. Wang, Z. J. Wang, M. Zhu, 2013 .