V. Beyer

发表

Ion beam synthesis and charge storage behavior of Au nanocrystals in thin SiO2 layers

T. Müller, F. Eichhorn, A. Mücklich, 2008 .

A Transient Electrical Model of Charging for Ge Nanocrystal Containing Gate Oxides with DRAM-Like Behavior

A. Mücklich, J. Borany, V. Beyer, 2007 .

Determination and evolution of tunneling distances in Ge nanocrystal based memories

J. Borany, M. Klimenkov, V. Beyer, 2006 .

Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in SiO 2 films

J. Borany, V. Beyer, 2008 .

Scaling and optimization of high-density integrated Si-capacitors

W. Weinreich, J. Paul, J. Sundqvist, 2013, 2013 International Semiconductor Conference Dresden - Grenoble (ISCDG).

Light emitting field effect transistor with two self-aligned Si nanocrystal layers

V. Beyer, Karl-Heinz Heinig, K. Stegemann, 2009 .

Dissociation of Si+ ion implanted and as-grown thin SiO2 layers during annealing in ultra-pure neutral ambient by emanation of SiO

K. Heinig, J. Borany, V. Beyer, 2007 .

First-principles study of oxygen and aluminum defects in β-Si3N4: Compensation and charge trapping

R. Degraeve, A. Arreghini, M. Czernohorsky, 2014 .

A novel silicon detector for energetic electrons with improved linearity characteristics

B. Schmidt, B. Schnabel, J. Borany, 2003 .

TaN metal gate damage during high-k (Al2O3) high-temperature etch

M. F. Beug, T. Mikolajick, S. Wege, 2009 .

Current-voltage characteristics of metal-oxide-semiconductor devices containing Ge or Si nanocrystals in thin gate oxides

V. Beyer, T. Müller, J. Borany, 2009 .