S. Terao

发表

Temperature-dependent carrier mobility and threshold voltage of field-effect transistors with tetracene single crystals

K. Kojima, Tadahiko Hirai, M. Tachibana, 2010 .

Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer

Motoaki Iwaya, Isamu Akasaki, Nobuaki Hayashi, 2000 .

High‐Efficiency GaN/AlxGa1—xN Multi‐Quantum‐Well Light Emitter Grown on Low‐Dislocation Density AlxGa1—xN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2001 .

High Efficiency Uv Emitter Using High Quality GaN/Al x Ga 1−x N Multi-Quantum Well Active Layer

S. Kamiyama, H. Amano, I. Akasaki, 2000 .

Defect and Stress Control of Algan and Fabrication of High-Efficiency Uv-Led

S. Kamiyama, H. Amano, I. Akasaki, 2000 .

High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector

H. Amano, I. Akasaki, A. Hirano, 2000 .

High-Quality Al x Ga 1−x N Using Low Temperature-Interlayer and its Application to UV Detector

H. Amano, A. Hirano, Nobuaki Hayashi, 1999 .

Annihilation of Threading Dislocations in GaN/AlGaN

H. Amano, I. Akasaki, N. Kuwano, 2002 .

Relaxation of misfit-induced stress in nitride-based heterostructures

S. Kamiyama, H. Amano, I. Akasaki, 2002 .

Suppression of phase separation of AlGaN during lateral growth and fabrication of high-efficiency UV-LED on optimized AlGaN

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2002 .