Liwu Lu

发表

Influence of electron irradiation on hydrothermally grown zinc oxide single crystals

W. Skorupa, G. Brauer, W. Anwand, 2008 .

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

C. Surya, W. Fong, C. Zhu, 2002 .

Temperature sensitive photoconductivity observed in InN layers

Xiaodong Wang, W. Ge, Xiantong Zheng, 2013 .

Characterization of deep centers in AlGaAs/InGaAs/GaAs pseudomorphic HEMT structures grown by molecular beam epitaxy and hydrogen treatment

W. Ge, Yuqi Wang, Zhan-guo Wang, 1996 .

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

W. Ge, Chu-Shou Yang, Jiannong Wang, 2003 .

Deep Electron States in n-type Al-doped ZnS1-xTex Grown by Molecular Beam Epitaxy

G. Wong, W. Ge, Yuqi Wang, 1997 .

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

W. Ge, Zuntu Xu, Zhan-guo Wang, 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).

Threshold reduction in strained-layer InGaAs/GaAs quantum well lasers by liquid phase epitaxy regrowth

W. Ge, Jiannong Wang, Guowen Yang, 1998 .

Deep centers inAlGaAs/GaAs GRIN-SCHSQW laser structures grown by MBE and MOCVD

Hui Yang, W. Ge, Yuqi Wang, 1996 .

Conduction-band offset in a pseudomorphic GaAs/In0.2Ga0.8As quantum well determined by capacitance–voltage profiling and deep-level transient spectroscopy techniques

W. Ge, Yuqi Wang, Zhan-guo Wang, 1998 .

Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

A. Djurišić, W. Skorupa, G. Brauer, 2008 .

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

W. Ge, Zhan-guo Wang, Chu-Shou Yang, 2002 .