C. Kang

The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of $\hbox{HfO}_{2}$ MOSFET Devices

H. Hwang, Tae-Wook Kim, M. Jo, 2008, IEEE Electron Device Letters.

Effect of substrate hot carrier stress on high-k gate stack

G. Bersuker, R. Jammy, H. Tseng, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.