R. Beyer

发表

Charge storage in silicon-implanted silicondioxide layers examined by scanning probe microscopy

J. Borany, J. Weber, E. Beyreuther, 2006 .

Scanning capacitance microscopy and -spectroscopy on SiO 2 films with embedded Ge and Si nanoclusters

J. Borany, J. Weber, E. Beyreuther, 2004 .

Evidence of a thermally stimulated charge transfer mechanism and interface defect formation in metal-oxide-semiconductor structures with germanium nanocrystals

Reinhard Beyer, Johannes von Borany, J. Borany, 2009 .

Determination of size and density of embedded Ge nanocrystals in SiO2 by scanning force microscopy using a tomographic approach

J. Borany, R. Beyer, 2012 .

A study of the interface states in MIS-structures with thin SiO2 and SiOxNy layers using deep level transient spectroscopy

D. Zahn, R. Reich, T. Gessner, 1999 .

A deconvolution of the transient response of (100) Si/SiO2 semiconductor–insulator interface states according to small pulse excitation: evidence of different branches of charge transition

D. Zahn, T. Gessner, I. Thurzo, 2000 .

Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Yu. G. Sadofyev, J. Weber, L. Borkovska, 2007 .

Role of Cation Vacancy-Related Defects in Self-Assembling of CdSe Quantum Dots

Yu. G. Sadofyev, J. Weber, L. Borkovska, 2004 .

The static quadrupole moments of the first 2+ states of 74Ge and 76Ge

R. Scharenberg, D. Grissmer, G. Schilling, 1972 .

A Study of the Compositional Structure and Electrical Behaviour of Thin Silicon Oxynitride Layers Prepared by Rapid Thermal Processing

G. Weidner, R. Reich, D. Grambole, 1994 .

Study of strain relaxation in CdSe/ZnSe nanostructures

Ye. F. Venger, L. Borkovska, O. Gudymenko, 2005 .

Experimental evidence for complementary spatial sensitivities of capacitance and charge deep-level transient spectroscopies

D. Zahn, I. Thurzo, R. Beyer, 2000 .

On the stability of the scalar field in the gravitational field of a rotating (Kerr‐) black hole

R. Beyer, 2010 .

Electrical transport and trap properties in nitrogen-doped p-type MBE-grown ZnSe layers on GaAs using different contact materials

D. Zahn, D. Hommel, M. Behringer, 1998 .

A STUDY OF DEEP CENTERS IN ZN1-XMGXSE CRYSTALS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY

D. Zahn, F. Firszt, R. Beyer, 1998 .

Structural properties and electrical behaviour of thin silicon oxynitride layers

D. Zahn, R. Reich, T. Gessner, 1998 .