Eisuke Tokumitsu

发表

Observation of high dielectric constant of Bi-Nb-Ox thin-film capacitors fabricated by chemical solution deposition process

Tatsuya Shimoda, Masatoshi Onoue, Takaaki Miyasako, 2014, IEICE Electron. Express.

2. Oxide Thin Film Transistors Fabricated by Solution Process( Achievements and Prospects of Oxide Electronics)

Tatsuya Shimoda, Eisuke Tokumitsu, 2014 .

Electrical Properties of Sol-Gel Derived Ferroelectric Pb(Zr,Ti)O~3 Films Fabricated Using Low-Pressure Consolidation Process

Takaaki Miyasako, Eisuke Tokumitsu, Masaru Senoo, 2004 .

Experimental demonstration of a ferroelectric FET using paper substrate

Seung-Hyun Kim, Shun'ichiro Ohmi, Yun Jeong Hwang, 2014, IEICE Electron. Express.

Neuron Integrated Circuits with Adaptive Learning Function Using Ferroelectric (SrBi2Ta2O9)- Gate FETs and CMOS Schmitt-Trigger Oscillators

Sung-Min Yoon, Hiroshi Ishiwara, Eisuke Tokumitsu, 1999 .

Electric field effects on radiative transition in quantum dot inorganic electroluminescent devices

Yuki Tani, Eisuke Tokumitsu, Satoshi Kobayashi, 2010, IEICE Electron. Express.

Multiagent Strategic Interaction Based on a Game Theoretical Approach to Polarization Reversal in Ferroelectric Capacitors

Eisuke Tokumitsu, Dan Ricinschi, E. Tokumitsu, 2011, J. Adv. Comput. Intell. Intell. Informatics.

Special Section on Fundamental and Application of Advanced Semiconductor Devices

Eisuke Tokumitsu, 2005, IEICE Trans. Electron..

Special Section on New Era of Nonvolatile Memories

Eisuke Tokumitsu, 2004 .

Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

Tatsuya Shimoda, Phan Trong Tue, Masatoshi Onoue, 2011 .

Effect of Oxidant in MOCVD-Growth of Al2O3 Gate Insulator on 4H-SiC MOSFET Properties

Eisuke Tokumitsu, Tatsuo Oomori, Naruhisa Miura, 2009 .

Low Leakage La2O3 Gate Insulator Film with EOTs of 0.8-1.2 nm

Hiroshi Iwai, Hiroshi Ishiwara, Eisuke Tokumitsu, 2001 .

High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator

Eisuke Tokumitsu, Tatsuo Oomori, Naruhisa Miura, 2008 .

Flexible High-Performance Amorphous InGaZnO4 Thin-Film Transistors Utilizing Excimer Laser Annealing

Setsuo Kaneko, Hirotaka Yamaguchi, Eisuke Tokumitsu, 2009 .

REALIZATION OF ADAPTIVE LEARNING FUNCTION IN A NEURON CIRCUIT USING METAL/FERROELECTRIC (SRBI2TA2O9)/SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MFSFET)

Sung-Min Yoon, Hiroshi Ishiwara, Eisuke Tokumitsu, 1999 .

Rheology printing for metal-oxide patterns and devices

Tatsuya Shimoda, Phan Trong Tue, Takaaki Miyasako, 2014 .

A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

Eisuke Tokumitsu, Eiji Fujii, Yukihiro Kaneko, 2011 .

Proposal of a Single-Transistor-Cell-Type Ferroelectric Memory Using an SOI Structure and Experimental Study on the Interference Problem in the Write Operation

Toshishige Shimamura, Hiroshi Ishiwara, Eisuke Tokumitsu, 1997 .

Correlation between Fermi Level Stabilization Positions and Maximum Free Carrier Concentrations in III–V Compound Semiconductors

Eisuke Tokumitsu, E. Tokumitsu, 1990 .

Effects of Excimer Laser Annealing on InGaZnO4 Thin-Film Transistors Having Different Active-Layer Thicknesses Compared with Those on Polycrystalline Silicon

Setsuo Kaneko, Shinya Yamaguchi, Hirotaka Yamaguchi, 2009 .

Fabrication and characterization of metal-ferroelectrics-semiconductor field effect transistors using epitaxial bamgf4 films grown on si(111) substrates

Eisuke Tokumitsu, Koji Aizawa, Tomoyuki Okamoto, 1997 .

An Electrically Modifiable Synapse Array Composed of Metal-Ferroelectric-Semiconductor (MFS) FET's Using SrBi Ta O Thin Films

Sung-Min Yoon, Hiroshi Ishiwara, Eisuke Tokumitsu, 1999 .

Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2/Si Structure-Field Effect Transistor as a Synapse Device.

Sung-Min Yoon, Hiroshi Ishiwara, Eisuke Tokumitsu, 2000 .

Improvement of InGaZnO4 Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

Setsuo Kaneko, Hirotaka Yamaguchi, Eisuke Tokumitsu, 2009 .

Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures

Hiroshi Ishiwara, Eisuke Tokumitsu, H. Ishiwara, 2001 .

Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process

Tatsuya Shimoda, Phan Trong Tue, Masatoshi Onoue, 2010 .

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor

Sung-Min Yoon, Hiroshi Ishiwara, Chi-Sun Hwang, 2010 .