D. Briand

发表

From amorphous to polycrystalline thin films: dependence on annealing time of structural and electronic properties

J. Kleider, C. Longeaud, O. Bonnaud, 1998 .

Conduction behaviour of low-temperature (≤600°C) polysilicon TFTs with an in situ drain doping level

Olivier Bonnaud, Laurent Pichon, F. Raoult, 1995 .

Performance of thin film Transistors on Unhydrogenated In-Situ Doped Polysilicon films Obtained by Solid Phase Crystallization

Olivier Bonnaud, Tayeb Mohammed-Brahim, Laurent Pichon, 1997 .

Growth and structural characterization of cerium oxide thin films realized on Si(111) substrates by on-axis r.f. magnetron sputtering

Y. Guhel, B. Boudart, J. Bernard, 2008 .

Effect of the starting amorphous structure on the solid-phase crystallization of silicon

O. Bonnaud, D. Louër, L. Haji, 1997 .

Deposition of thick silicon layers on glass substrate for photovoltaic application

O. Bonnaud, D. Briand, M. Sarret, 1997 .

Growth and luminescence of n-type porous polycrystalline silicon

M. Guendouz, B. Lambert, D. Briand, 1995 .

On the luminescence properties of CaSO4:Ce.

M. Benabdesselam, P. Iacconi, D. Lapraz, 2002, Radiation protection dosimetry.

Influence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers

P. Duverneuil, K. Kis-Sion, D. Briand, 1995 .

60Co gamma irradiation effects on electrical characteristics of Al/Y2O3/n-Si/Al capacitors

Y. Guhel, B. Boudart, D. Briand, 2010 .

Thermally stimulated properties of CVD diamond films

M. Benabdesselam, P. Iacconi, D. Lapraz, 2000 .

Selected Thermoluminescent Properties in CVD Diamond Film

J. Butler, M. Benabdesselam, P. Iacconi, 1999 .

Thermoluminescence properties of nitrogen containing chemical vapour deposited diamond films

J. Butler, M. Benabdesselam, P. Iacconi, 2001 .

Characterisation by thermoluminescence of boron doped polycrystalline diamond films

M. Benabdesselam, P. Iacconi, D. Lapraz, 2000 .

Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements

O. Bonnaud, F. L. Bihan, D. Briand, 1997 .

Thermoluminescence of nickel-doped synthetic diamond crystals

Mourad Benabdesselam, Etienne Gheeraert, Hisao Kanda, 2000 .

Performance of CVD diamond as a thermoluminescent dosemeter

J. Butler, M. Benabdesselam, P. Iacconi, 2000 .

In situ doping of silicon deposited by LPCVD: pressure influence on dopant incorporation mechanisms

P. Duverneuil, K. Kis-Sion, D. Briand, 1999 .

Very-Low Surface Roughness in Laser Crystallized Polycrystalline Silicon

O. Bonnaud, K. Mourgues, P. Boher, 1997 .

Thermal Activation of the Crystallization Kinetics of Amorphous Silicon

O. Bonnaud, A. Salaün, K. Kis-Sion, 1995 .

Polycrystalline Silicon Characteristics Dependence on Starting Amorphous Material

O. Bonnaud, K. Kis-Sion, D. Briand, 1995 .

Single shot excimer laser crystallization of silicon films deposited by LPCVD

J. Stehle, O. Bonnaud, P. Boher, 1997 .

Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization

O. Bonnaud, K. Mourgues, L. Pichon, 2001 .