M. Stehle

发表

Excimer laser treatment for large surface

M. Stehle, 1997 .

Low temperature polysilicon TFTs: a comparison of solid phase and laser crystallization

D. Pribat, P. Legagneux, E. Fogarassy, 1995 .

Single shot excimer laser annealing of amorphous silicon: effect of hydrogen on the properties of the poly silicon

J. Stehle, B. Godard, P. Boher, 1995 .

Growth of pseudomorphic Si1-yCy and Si1-x-yGexCy alloy layers on Si by ion implantation and pulsed excimer laser induced epitaxy

A. Grob, J. Grob, P. Boher, 1998 .

Single shot excimer laser annealing of amorphous silicon for AMLCD

J. Stehle, B. Godard, P. Boher, 1996 .

Surface melt dynamics and super lateral growth regime in long pulse duration excimer laser crystallization of amorphous Si films

D. Pribat, P. Legagneux, E. Fogarassy, 1999 .

Scanning tunnelling induced luminescence in semiconductors and metal films

H. Pagnia, B. Krebs, M. Bischoff, 1994 .

Single shot excimer laser crystallization of silicon films deposited by LPCVD

J. Stehle, O. Bonnaud, P. Boher, 1997 .

Growth of Si1-yCy/Si and Si1-x-yGexCy/Si heterostructures by ion implantation and pulsed excimer laser-induced epitaxy

Pierre Boher, Dominique Muller, Jean-Jacques Grob, 1997, Photonics West.

Crystallization of Si( 1-y C y Films by Excimer Laser Annealing: Characterization of the Microstructure of the Films

J. Stehle, A. Grob, J. Grob, 1996 .