M. Hawkridge

发表

Thermal stability of amorphous GaN1−xAsx alloys

C. T. Foxon, Junqiao Wu, Z. Liliental-Weber, 2011 .

Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN

E. Haller, W. Schaff, J. Speck, 2011 .

Open core threading dislocations in GaN grown by hydride vapour phase epitaxy

D. Cherns, M. Hawkridge, M. E. Hawkridge, 2006 .

InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates

T. L. Williamson, J. Beeman, W. Schaff, 2008 .

Electrical and electrothermal transport in InN: The roles of defects

E. Haller, W. Schaff, J. Speck, 2009 .

Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth

R. Dupuis, Z. Liliental-Weber, J. Ryou, 2009 .

Lawrence Berkeley National Laboratory Title : The Structural Quality of AlxGa 1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy

R. Dupuis, Z. Liliental-Weber, J. Ryou, 2010 .

The structure and properties of dislocations in GaN

D. Cherns, M. Hawkridge, 2006 .

Spontaneous stratification of InGaN layers and its influence on optical properties

S. Bedair, Z. Liliental-Weber, K. Yu, 2009 .

Non-equilibrium GaNAs Alloys with Band Gap Ranging from 0.8-3.4 eV

Z. Liliental-Weber, J. Denlinger, F. Luckert, 2010 .

Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

C. T. Foxon, Z. Liliental-Weber, J. Denlinger, 2011 .

Structural perfection of InGaN layers and its relation to photoluminescence

D. R. Khanal, S. Bedair, Junqiao Wu, 2009 .

Oxygen segregation to dislocations in GaN

David Cherns, D. Cherns, M. E. Hawkridge, 2005 .

Lateral migration of dislocations in oxygen-doped GaN grown by molecular beam epitaxy

D. Cherns, T. Myers, M. Hawkridge, 2006 .

High quality InxGa1–xN thin films with x > 0.2 grown on silicon

Joel W. Ager, Lothar A. Reichertz, W. Walukiewicz, 2010 .

High quality In x Ga 1 – x N thin films with x > 0 . 2 grown on silicon

J. Ager, K. Yu, W. Walukiewicz, 2011 .

Highly luminescent InxGa1–xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE)

Z. Liliental-Weber, J. Ager, R. Jones, 2009 .

Structural defects and cathodoluminescence of InxGa1‐xN layers

S. Bedair, Z. Liliental-Weber, K. Yu, 2011 .

Oxygen segregation to nanopipes in gallium nitride

D. Cherns, M. Hawkridge, 2005 .