J. M. Daughton

发表

Yield optimization in wafer scale circuits with hierarchical redundancies

J. S. T. Huang, J. M. Daughton, 1986, Integr..

Spin valves with NiO pinning layer

J. M. Daughton, J. Daughton, Dexin Wang, 1996 .

ANALYSIS OF M-R ELEMENTS FOR 108 BIT/cm2 ARRAYS

J. M. Daughton, 1989 .

Spin dependent tunneling devices fabricated for magnetic random access memory applications using latching mode

Arthur V. Pohm, J. M. Daughton, W. C. Black, 2000 .

Giant magnetoresistance in narrow stripes

J. M. Daughton, J. Daughton, P. A. Bade, 1992 .

New low current memory modes with giant magneto-resistance materials

J. M. Daughton, A. V. Pohm, K.T.M. Ranmuthu, 1993 .

Magnetic Tunneling Applied to Memory (Invited)

J. M. Daughton, J. Daughton, 1997 .

GMR materials for low field applications

Y. J. Chen, J. M. Daughton, J. Daughton, 1993 .

Exchange coupling between ferromagnetic and antiferromagnetic layers via Ru and application for a linear magnetic field sensor

J. M. Daughton, Cathy Nordman, Dexin Wang, 2006 .

GMR and SDT sensor applications

J. M. Daughton, J. Daughton, 2000 .

Gmr Applications

J. M. Daughton, J. Daughton, 1999 .

Magnetic properties of very thin single and multilayer NiFeCo and CoFe films deposited by sputtering

J. M. Daughton, G. A. Prinz, K. Bussmann, 1998 .