Yuki Kai

发表

Ultra-high-speed lateral solid phase crystallization of GeSn on insulator combined with Sn-melting-induced seeding

M. Miyao, R. Matsumura, T. Sadoh, 2014 .

Seeding Effects of Sn/a-Ge Island Structures for Low-Temperature Lateral-Growth of a-GeSn on Insulator

M. Miyao, R. Matsumura, T. Sadoh, 2016 .

Electronic conductivity measurements of 5 mol% TiO2-doped YSZ by a d.c.-polarization technique

S. Yamaguchi, Y. Iguchi, Kiyoshi Kobayashi, 1997 .

Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure

Jong Hyeok Park, A. M. Hashim, R. Matsumura, 2016 .

Formation of large-grain crystalline germanium on single layer graphene on insulator by rapid melting growth

Jong Hyeok Park, A. M. Hashim, R. Matsumura, 2016 .

High quality, giant crystalline-Ge stripes on insulating substrate by rapid-thermal-annealing of Sn-doped amorphous-Ge in solid-liquid coexisting region

M. Miyao, R. Matsumura, T. Sadoh, 2015 .

High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization

K. Moto, M. Miyao, R. Matsumura, 2016 .

Low-temperature (∼180 °C) position-controlled lateral solid-phase crystallization of GeSn with laser-anneal seeding

H. Ikenoue, M. Miyao, R. Matsumura, 2015 .