M. Kovalenko

Effect of Radiation-Induced Defects Produced by Low-Energy Protons in a Heavily Doped Layer on the Characteristics of n+‒p‒p+ Si Structures

A. I. Kovalenko, Yu. A. Agafonov, V. Zinenko, 2018, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Analysis of the Efficiency PETSc and PETIGA Libraries in Solving the Problem of Crystal Growth

L. V. Klyuev, I. Starodumov, E. Pavlyuk, 2015 .

Modelling of disordering regions in proton-irradiated silicon

N. Bogatov, M. Kovalenko, I. Nesterenko, 2020, Journal of Physics: Conference Series.

Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures

A. I. Kovalenko, L. S. Lunin, N. Bogatov, 2020, Semiconductors.

Effect of low-energy proton irradiation on parameters of silicon structures with n-p junction

A. I. Kovalenko, V. Zinenko, N. Bogatov, 2018 .

Modelling of voltage changes in the n-p junction in the pulse mode

N. Bogatov, M. Kovalenko, L. Grigoryan, 2021, Journal of Physics: Conference Series.