V. Sheremet

发表

InGaN stress compensation layers in InGaN/GaN blue LEDs with step graded electron injectors

H. Morkoç, V. Avrutin, Ü. Özgür, 2018 .

The mechanism of contact-resistance formation on lapped n-Si surfaces

N. S. Boltovets, V. Kostylyov, A. Sachenko, 2013 .

Properties of GaN(SiC)-(Ti, Zr)Bx contacts subjected to rapid thermal annealing

V. V. Milenin, N. S. Boltovets, A. Lebedev, 2009 .

Temperature dependences of the contact resistivity in ohmic contacts to n+-InN

N. S. Boltovets, P. Brunkov, A. Sachenko, 2015 .

Current flow through metal shunts in ohmic contacts to n+-Si

N. S. Boltovets, T. V. Petlitskaya, A. Sachenko, 2014 .

The temperature dependence of the resistivity of ohmic contacts based on gallium arsenide and indium phosphide in the 4.2–300 K range

N. S. Boltovets, S. Vitusevich, A. Sachenko, 2016 .

Effect of microwave irradiation on the resistance of Au-TiBx-Ge-Au-n-n+-n++-GaAs(InP) ohmic contacts

V. V. Milenin, N. S. Boltovets, A. Sachenko, 2012 .

Mechanism of contact resistance formation in ohmic contacts with high dislocation density

N. S. Boltovets, S. Vitusevich, A. Sachenko, 2012 .

Temperature dependence of contact resistance for Au-Ti-Pd2Si-n+-Si ohmic contacts subjected to microwave irradiation

N. S. Boltovets, A. Sachenko, A. Belyaev, 2012, 2011 21st International Crimean Conference "Microwave & Telecommunication Technology".

Mechanism of dislocation-governed charge transport in schottky diodes based on gallium nitride

V. V. Milenin, N. S. Boltovets, A. Belyaev, 2008 .

The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts

N. S. Boltovets, S. Vitusevich, A. Sachenko, 2014, 1401.1658.

Radiation damage of contact structures with diffusion barriers exposed to irradiation with 60Coγ-ray photons

V. V. Milenin, N. S. Boltovets, A. Belyaev, 2010 .

Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation density

V. V. Milenin, N. S. Boltovets, A. Sachenko, 2012 .

The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

H. Morkoç, V. Avrutin, Ü. Özgür, 2017 .

The features of temperature dependence pc(T) in ohmic contacts to n-GaN (n-AlN) with high dislocation density

N. S. Boltovets, A. Sachenko, A. Belyaev, 2012, 2012 22nd International Crimean Conference "Microwave & Telecommunication Technology".

Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts

N. S. Boltovets, A. Sachenko, A. Belyaev, 2010, 1104.1030.

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures

N. S. Boltovets, A. S. Slepova, V. V. Shynkarenko, 2019, Semiconductors.