B. Fang

Effects of Luminescence Efficiency in InGaN-GaN LEDs by Inserting a LT-GaN Underlying Layer to Separate Nonradiative Recombination Centers

R. Lin, Meng-Chyi Wu, S. Kuo, 2009 .

Cross sections for the investigation of the electroluminescence excitation of InGaN/GaN quantum wells in blue light-emitting diodes with multiquantum barriers

T. Nee, R. Lin, Jen-Cheng Wang, 2005 .

Study of electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum barrier structure

T. Nee, R. Lin, Jen-Cheng Wang, 2005 .

Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs

Meng-Chyi Wu, Yung-Hsiang Lin, Shou-Yi Kuo, 2010, Microelectron. Reliab..

Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes

T. Nee, R. Lin, L. Chou, 2003 .

Effect of Well Thickness on the Intersubband Optical Absorptions in AlGaN/GaN/AlGaN Quantum Wells

G. Sun, B. Fang, Y. Zhang, 2012, 2012 Symposium on Photonics and Optoelectronics.