R. Fritz

Strain Measurement in Semiconductor Heterostructures by Scanning Transmission Electron Microscopy

K. Volz, A. Rosenauer, J. Zweck, 2012, Microscopy and Microanalysis.

Lasing in optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures on silicon

M. Hofmann, N. Gerhardt, D. J. Franzbach, 2009, 2009 Conference on Lasers and Electro-Optics and 2009 Conference on Quantum electronics and Laser Science Conference.

Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging

K. Volz, O. Rubel, N. Neugebohrn, 2011 .

Atomic scale annealing effects on InxGa1−xNyAs1−ystudied by TEM three-beam imaging

D. Hu, D. Schaadt, K. Volz, 2011 .

Bismuth-containing III–V semiconductors

Adam J. Duzik, M. Koch, S. Koch, 2013 .

Correlation between hetero-interface properties and photoluminescence efficiency of Ga(NAsP)/(BGa)P multi-quantum well structures on (0 0 1) Si substrate

Wolfgang Stolz, Kerstin Volz, Rafael Fritz, 2011 .

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

S. Koch, T. Tiedje, Yong-Hang Zhang, 2012, Journal of Materials Science: Materials in Electronics.

Determination of the chemical composition of GaNAs using STEM HAADF imaging and STEM strain state analysis.

K. Volz, N. Neugebohrn, A. Rosenauer, 2012, Ultramicroscopy.

Monolithic integration of the III/V laser material Ga(NAsP) lattice-matched on (001) Silicon substrate

K. Volz, B. Kunert, W. Stolz, 2008, 2008 5th IEEE International Conference on Group IV Photonics.

Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures

C. Karcher, F. Gebhard, K. Volz, 2010 .

Quantitative chemical evaluation of dilute GaNAs using ADF STEM: avoiding surface strain induced artifacts.

V. Grillo, K. Volz, A. Rosenauer, 2013, Ultramicroscopy.