O. Sabitov

发表

Effect of driving voltage pulse shape on the luminance of thin-film electroluminescent devices

N. T. Gurin, O. Sabitov, 1999 .

Electroluminescence parameters of thin-film ZnS: Mn electroluminescent devices

N. T. Gurin, O. Sabitov, 2006 .

Electroluminescence kinetics in thin-film ZnS-based devices at ultralow frequencies

N. T. Gurin, O. Sabitov, A. Shlyapin, 2002 .

Characteristics of tunneling and impact ionization in ZnS:Mn-based thin-film electroluminescent structures

A. Afanas’ev, N. T. Gurin, O. Sabitov, 2007 .

Tunneling and impact ionization in thin-film ZnS:Mn-based electroluminescent structures

D. V. Ryabov, A. Afanas’ev, N. T. Gurin, 2006 .

Electron tunneling in ZnS:Mn thin-film emitters

D. V. Ryabov, A. Afanas’ev, N. T. Gurin, 2005 .

Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off

N. T. Gurin, O. Sabitov, 2008 .

Switch-off relaxation of the parameters of ZnS:Mn thin-film electroluminescent emitters

N. T. Gurin, O. Sabitov, 2008 .

The effect of space charge on the characteristics of ZnS thin-film electroluminescent devices

N. T. Gurin, O. Sabitov, A. Shlyapin, 2001 .

Negative differential resistance in thin-film electroluminescent emitters based on zinc sulfide

N. T. Gurin, O. Sabitov, A. Shlyapin, 2001 .

Characteristics of surface states at the insulator-semiconductor interface in the thin-film electroluminescent structures based on ZnS:Mn

A. Afanas’ev, N. T. Gurin, O. Sabitov, 2010 .

Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters

A. Afanas’ev, N. T. Gurin, O. Sabitov, 2010 .