T. Obata

Formation of compressively strained SiGe/Si(110) heterostructures and their characterization

K. Nakagawa, Y. Shiraki, K. Sawano, 2013 .

Electrical properties of nearly stoichiometric GaAs grown by molecular beam epitaxy at low temperature

N. Ōtsuka, T. Obata, S. Fukushima, 2001 .

Infrared luminescence of erbium-silicon-oxide crystalline compound on silicon

Y. Kamiura, M. Higuchi, T. Obata, 2012, 2012 IEEE 3rd International Conference on Photonics.

The effect of buffer layers on structural quality of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy

H. Ueba, C. Tatsuyama, T. Obata, 1997 .

Structural characterization of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy

H. Ueba, C. Tatsuyama, T. Obata, 1997 .