Atsuki Hidaka

发表

Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2021, Japanese Journal of Applied Physics.

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2020 .

Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration

K. Kojima, H. Okumura, Tomohisa Kato, 2018, Applied Physics Express.

Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2020, Japanese Journal of Applied Physics.

Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers

K. Kojima, H. Okumura, Tomohisa Kato, 2019, Japanese Journal of Applied Physics.

Possibility of gated silicon drift detector detecting hard x-ray

Shohei Ishikawa, Hideharu Matsuura, Shinya Fukushima, 2015, SPIE Optical Engineering + Applications.

Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

Shohei Ishikawa, Hideharu Matsuura, Shinya Fukushima, 2015, Sensors.

Electrical Properties of Heavily Al-Doped 4H-SiC

Atsuki Hidaka, Akinobu Takeshita, Y. Kondo, 2023, Materials Science Forum.

Relationship between Temperature Dependencies of Resistivity and Hall Coefficient in Heavily Al-Doped 4H-SiC Epilayers

K. Kojima, H. Okumura, Tomohisa Kato, 2019, Materials Science Forum.

Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC

K. Kojima, H. Okumura, Tomohisa Kato, 2018, Materials Science Forum.

Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

Y. Ishida, S. Ji, Atsuki Hidaka, 2023, Journal of Applied Physics.