Zhigang Jia

发表

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

Bing-she Xu, Hailiang Dong, Yongzhen Yang, 2017, Nanoscale Research Letters.

The disparity of corrosion resistance between Ni/Au and Ni–P/Au electrical contacts in mixed flowing and salt spray tests

Yizhong Huang, Zhong Chen, V. Murugan, 2017, Journal of Materials Science.

An investigation into different nickel and nickel–phosphorus stacked thin coatings for the corrosion protection of electrical contacts

C. Gan, Yizhong Huang, Zhong Chen, 2016 .

Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells

Xuguang Liu, Bing-she Xu, Hailiang Dong, 2017, Nanoscale Research Letters.

Solvent-mediated surface ligand exchange to enhance the performance of quantum-dot light-emitting diodes

Bingshe Xu, Yanqin Miao, Hua Wang, 2022, Organic Electronics.

Three-step growth of metamorphic GaAs on Si(001) by low-pressure metal organic chemical vapor deposition

X. Ren, Qi Wang, Yongqing Huang, 2013 .

Effect of different buffer layers and superlattice intermediate layers on GaAs/Si(001)

X. Ren, Qi Wang, Yongqing Huang, 2013 .

Dependence of doubly curved regions on drying method in the fabrication of long-side rolled-up III-V microtubes

X. Ren, Qi Wang, Yongqing Huang, 2013 .

The electronic and optical properties of quaternary BxGa1−xAs1−ySby alloys with low boron concentration: A first-principles study

X. Ren, Qi Wang, Yongqing Huang, 2013 .

Selective area growth of InP on lithography-free, nanopatterned GaAs(001) by metalorganic chemical vapor deposition

X. Ren, Qi Wang, Yongqing Huang, 2014 .

Evolution mechanism of InGaN quantum dots and their optical properties

Kai Qu, Xuguang Liu, Bing-she Xu, 2020 .

Measurement of contact potential difference and material distribution by using an SEFM

Y. Shimizu, S. Ito, Keiichiro Hosobuchi, 2014 .

Investigation of photoelectric performance of laser diode by regulation of p-waveguide layer thickness

Kai Qu, W. Wong, Xuguang Liu, 2020 .

LP-MOCVD growth of BGaAsSb thick layers and BGaAsSb/GaAs quantum well structures on GaAs (001) substrates

X. Ren, Qi Wang, Yongqing Huang, 2014 .

Effects of boron incorporation on the strain and photoluminescence properties of GaAsSb/GaAs quantum wells

X. Ren, Qi Wang, Yongqing Huang, 2013 .

Atmospheric corrosion resistance of electroplated Ni/Ni-P/Au electronic contacts

Zhong Chen, Vinod K. Murugan, Zhigang Jia, 2016, Microelectron. Reliab..

The formation of island-shaped morphology on the surface of InGaN/GaN QWs and the enhancement of carrier localization effect caused by high-density V-shaped pits

Tianbao Li, Hailiang Dong, Shufang Ma, 2021 .

An Electrostatic Force Probe for Surface Profile Measurement in Noncontact Condition

Wei Gao, Zhigang Jia, Gaofa He, 2013, Int. J. Autom. Technol..

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite

Tianbao Li, Lin Gan, Hailiang Dong, 2018, Nanoscale Research Letters.

Surface form metrology of micro-optics

Wei Gao, Zhigang Jia, Yuki Shimizu, 2013, Other Conferences.

Surface Profile Measurement of Micro-Optics by Using a Long Stroke Atomic Force Microscope

Y. Shimizu, Yuan-Liu Chen, S. Ito, 2017 .

Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer

Tianbao Li, Hailiang Dong, Wei Jia, 2022, AIP Advances.

First-principle study of the electronic and optical properties of BInGaAs quaternary alloy lattice-matched to GaAs

X. Ren, Qi Wang, Yongqing Huang, 2012 .

Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region

Hailiang Dong, Jianwei Liang, Wei Jia, 2023, Optics Communications.

Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode.

Xuguang Liu, Hailiang Dong, Jing Sun, 2016, Physical chemistry chemical physics : PCCP.

Numerical study on photoelectric properties of semi-polar 101̄1 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers

Tianbao Li, Hailiang Dong, Wei Jia, 2022, AIP Advances.

The saturation density property of (B)InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition

X. Ren, Yongqing Huang, Xin Guo, 2012 .

Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

X. Ren, Qi Wang, Yongqing Huang, 2013 .

Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N2/H2 mixture gas

Xuguang Liu, Hailiang Dong, Xiaorun Zhou, 2017 .

Measurement of spectacle lenses using wavefront aberration in real view condition.

Kai Xu, Zhigang Jia, Fengzhou Fang, 2017, Optics express.

The effect of growth temperature on InAs quantum dots grown by MOCVD

Xiaomin Ren, Qi Wang, Zhigang Jia, 2011, Asia Communications and Photonics conference and Exhibition.

Effective wavefront aberration measurement of spectacle lenses in as-worn status

Zhigang Jia, Fengzhou Fang, Kai Xu, 2018 .

Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

Xiaomin Ren, Qi Wang, Zhigang Jia, 2011, 2011 Asia Communications and Photonics Conference and Exhibition (ACP).

InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure

Hailiang Dong, Jianwei Liang, Wei Jia, 2023, AIP Advances.

Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode

Xuguang Liu, Peizhi Liu, Bing-she Xu, 2017 .