M. Murakami

发表

Characterization of V-defects in InGaN Single Quantum Well Films at the Nanometer Level by High-Spatial-Resolution Cathodoluminescence Spectroscopy

H. Harima, H. Ishida, M. Yoshikawa, 2008, Applied spectroscopy.

Defect characterization of Si-doped GaN films by a scanning near-field optical microscope-induced photoluminescence

K. Matsuda, H. Ishida, R. Sugie, 2006 .

Orange luminescence of Eu3+-doped CuLaO2 delafossite oxide

Masashi Takahashi, T. Hashimoto, F. Fujishiro, 2010 .

Nanomachining on Si (100) Surfaces Using an Atomic Force Microscope with Lateral Force Transducer

Y. Morimoto, Y. Ichida, M. Murakami, 2003 .

Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering

K. Matsuda, H. Ishida, R. Sugie, 2006 .

Stress Characterization of the Interface Between Thermal Oxide and the 4H-SiC Epitaxial Layer Using Near-Field Optical Raman Microscopy

Y. Fujita, M. Yoshikawa, M. Murakami, 2019, Applied spectroscopy.

Characterizing nanometer-sized V-defects in InGaN single quantum well films by high-spatial-resolution cathodoluminescence spectroscopy

H. Harima, H. Ishida, M. Yoshikawa, 2009 .

Highly sensitive detection of near-field Raman scattered light from strained Si∕SiGe heterostructures by scanning near-field optical Raman microscope using ultraviolet resonant Raman scattering

H. Ishida, M. Yoshikawa, M. Murakami, 2008 .

Characterization of Si nanostructures using a noncontact mode scanning near-field optical Raman microscope, with 100nm spatial resolution and 5nm depth resolution, using ultraviolet resonant Raman scattering

H. Ishida, M. Yoshikawa, M. Murakami, 2007 .

Stress Characterization of Si by Near-Field Raman Microscope Using Resonant Scattering

M. Yoshikawa, M. Murakami, 2006, Applied spectroscopy.