O. Maßmeyer

In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE

K. Volz, W. Stolz, O. Maßmeyer, 2020 .

Revealing the Significance of Catalytic and Alkyl Exchange Reactions during GaAs and GaP Growth by Metal Organic Vapor Phase Epitaxy

K. Volz, W. Stolz, C. von Hänisch, 2021, ACS omega.

Decomposition Mechanisms of Ditertiarybutylaminoarsan (DTBAA)

K. Volz, W. Stolz, C. Ritter, 2019 .

Room‐temperature laser operation of a Ga(In,As)/Ga(As,Bi)/Ga(In,As) W‐type laser diode

K. Volz, W. Stolz, S. Reinhard, 2021, Electronics Letters.

Dilute Bismuth Containing W-Type Heterostructures for Long-Wavelength Emission on GaAs Substrates

K. Volz, W. Stolz, S. Chatterjee, 2021, Crystal Growth & Design.

Metalorganic vapor phase epitaxy growth and characterization of quaternary (Ga,In)(As,Bi) on GaAs substrates

S. Sweeney, K. Volz, O. Maßmeyer, 2019, Journal of Applied Physics.

An experimental approach for real time mass spectrometric CVD gas phase investigations

K. Volz, W. Stolz, O. Maßmeyer, 2018, Scientific Reports.

Ga(N,P) Growth on Si and Decomposition Studies of the N–P Precursor Di-tert-butylaminophosphane (DTBAP)

K. Volz, W. Stolz, C. Hänisch, 2020 .

4D-STEM on Epitaxial Grown 2D Vertical Heterostructures of Twisted WS2.

K. Volz, M. Heuken, J. Belz, 2023, Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada.

Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study

M. Heuken, J. Belz, A. Beyer, 2024, 2402.13020.

Influence of UDMHy on GaAs (0 0 1) surface reconstruction before and during growth of Ga(NAs) by MOVPE

K. Volz, W. Stolz, O. Maßmeyer, 2018, Applied Surface Science.

Synthesis of 2D Gallium Sulfide with Ultraviolet Emission by MOCVD.

J. M. Gottfried, J. Belz, A. Beyer, 2024, Small.