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Two‐band analysis of hole mobility and Hall factor for heavily carbon‐doped p‐type GaAs

B. W. Kim, A. Majerfeld, 1996 .

Direct determination of the piezoelectric field in (111) strained InGaAs/GaAs multiple quantum well p-i-n structures by photoreflectance

J. Sánchez-Rojas, A. Sanz-Hervás, E. Muñoz, 1998 .

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Transit-time-induced microwave negative resistance in Ga 1-x Alxas--GaAs heterostructure diodes

P. Robson, F. Hasegawa, J. Sitch, 1975 .

Effect of heat treatment on the nature of traps in epitaxial GaAs

F. Hasegawa, A. Majerfeld, 1976 .

A comprehensive optical characterization method for high-performance n-p-n AlGaAs-GaAs heterojunction bipolar transistors

P. Wright, Z. Lu, L. W. Yang, 1995 .

Strain relaxation and compensation due to annealing in heavily carbon‐doped GaAs

M. Hanna, D. Szmyd, A. Majerfeld, 1991 .

Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p‐type GaAs

Z. Lu, M. Hanna, A. Majerfeld, 1991 .

Atmospheric pressure organometallic vapor phase epitaxy growth of high-mobility GaAs using trimethylgallium and arsine

Z. Lu, M. Hanna, A. Majerfeld, 1990 .

Elimination of an artifact in the photoluminescence spectra of heavily doped C‐GaAs epitaxial layers on undoped GaAs substrates

Z. Lu, A. Majerfeld, 1994 .

Determination of band gap narrowing and hole density for heavily C‐doped GaAs by photoluminescence spectroscopy

Z. Lu, M. Hanna, A. Majerfeld, 1994 .

Properties of the deep donor states of AlxGa1−xAs:Se

Z. Lu, M. Hanna, D. Szmyd, 1993 .

Heavily doped p‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4

P. Wright, Z. Lu, L. W. Yang, 1992 .

Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass

D. M. Szmyd, A. Majerfeld, S. Lagomarsino, 1990 .

Velocity saturation and the conduction‐band structure of Ga1−xAlxAs under pressure

P. Robson, A. Saxena, T. Sugeta, 1977 .

Deep‐level traps and the conduction‐band structure of InP

O. Wada, A. Choudhury, A. Majerfeld, 1978 .

Subthreshold velocity‐field characteristics for bulk and epitaxial InP

P. N. Robson, A. Majerfeld, K. E. Potter, 1974 .

Intrinsic carbon incorporation in very high purity MOVPE GaAs

Z. Lu, M. Hanna, A. Majerfeld, 1992 .

Determination of donor and acceptor densities in high‐purity GaAs from photoluminescence analysis

Z. Lu, M. Hanna, D. Szmyd, 1990 .

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P. Wright, Z. Lu, L. W. Yang, 1995 .

Surface morphology of liquid-phase-epitaxial InP

S. Guha, P. Robson, A. Majerfeld, 1975 .

Substrate-induced peak in the photoluminescence of heavily doped epitaxial GaAs

D. Szmyd, A. Majerfeld, 1989 .

Interfacial properties of strained piezoelectric InGaAs∕GaAs quantum wells grown by metalorganic vapor phase epitaxy on (111)AGaAs

Soohaeng Cho, A. Sanz-Hervás, B. W. Kim, 2004 .

Electronic parameters and interfacial properties ofGaAs/AlxGa1−xAsmultiquantum wells grown on(111)AGaAs by metalorganic vapor phase epitaxy

Soohaeng Cho, A. Sanz-Hervás, B. W. Kim, 2003 .

MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on [111]A-oriented substrates

Soohaeng Cho, A. Sanz-Hervás, B. W. Kim, 2001 .

Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy

Soohaeng Cho, A. Sanz-Hervás, B. W. Kim, 2000 .

Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (1 1 1)A substrates by metal organic vapor phase epitaxy

Soohaeng Cho, A. Sanz-Hervás, B. W. Kim, 1998 .

Structural properties of strained piezoelectric [1 1 1]A-oriented InGaAs/GaAs quantum well structures grown by MOVPE

Soohaeng Cho, G. Patriarche, A. Sanz-Hervás, 2003 .

MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (1 1 1)A GaAs substrates

Soohaeng Cho, A. Sanz-Hervás, B. W. Kim, 2000 .

High quality GaAs/AlGaAs quantum wells grown on (111)A substrates by metalorganic vapor phase epitaxy

A. Sanz-Hervás, B. W. Kim, A. Majerfeld, 1997 .

Analysis of Transport Parameters in an Interacting Two-Band Model with Application to $p^{+}$-GaAs

B. W. Kim, A. Majerfeld, B. W. Kim, 1995 .

Characterization of piezoelectric and pyroelectric properties of MOVPE-grown strained (111)A InGaAs/GaAs QW structures by modulation spectroscopy

Soohaeng Cho, G. Patriarche, A. Sanz-Hervás, 2003 .

Carbon doping exceeding 1020 cm-3 in GaAs grown by AP-MOVPE

Z. Lu, M. Hanna, D. Szmyd, 1991 .

Studies of photoluminescence in GaAs1−xPx mixed crystals

G. L. Pearson, J. Gaj, A. Majerfeld, 1971 .

The effect of the material velocity—Field characteristic on the small-signal microwave impedance of punchthrough devices

C. G. Englefield, P. Robson, F. Hasegawa, 1976, IEEE Transactions on Electron Devices.

Research on nonlinear optical materials: an assessment.

P. S. Brody, R. Burnham, H. Gibbs, 1987, Applied optics.

Strain-induced optical waveguiding in GaAs epitaxial layers at 1.15 μm

P. N. Robson, A. Majerfeld, L. D. Westbrook, 1979 .