B. Han

发表

Influence of the reconstruction of GaAs (0 0 1) on the electro-optical bulk properties

W. Richter, M. Pristovsek, S. Tsukamoto, 2003 .

In‐situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy

W. Richter, M. Weyers, M. Zorn, 2001 .

Deep donor-acceptor pair luminescence in codoped GaN

Melville P. Ulmer, Bruce W Wessels, J. M. Gregie, 2002 .

Optical properties of Mn4+ ions in GaN:Mn codoped with Mg acceptors

B. Wessels, R. Korotkov, M. Ulmer, 2004, cond-mat/0405097.

Optical investigation of electronic states of Mn4+ ions in p-type GaN

B. Wessels, M. Ulmer, B. Han, 2004, cond-mat/0412301.

Investigation of composition fluctuations in GaN:Mg using optical transmission spectroscopy, near-field scanning optical microscopy, and scanning Kelvin probe microscopy

B. Wessels, M. Ulmer, B. Han, 2005 .

Temperature-dependent Raman scattering in round pit of 4H–SiC

R. Han, B. Han, M. Zhang, 2011 .

Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1−xO2/SiO2 high-k stacks as evidenced by atom probe tomography

Y. Shimizu, Koji Inoue, M. Inoue, 2018 .

PbS nanoparticles stabilised blue phase liquid crystals

D. Luo, Yong Li, H. Dai, 2015 .

High-performance circularly polarized electroluminescence from d-f transition europium(II) complexes

Z. Bian, Zhiwei Liu, Kuang Yu, 2022, Cell Reports Physical Science.

In-Plane Magnetization-Induced Corner States in Bismuthene

Z. Qiao, Junjie Zeng, B. Han, 2022, Chinese Physics Letters.

Metal‐organic chemical vapor deposition/open flow thallium annealing route to epitaxial Tl2Ba2Ca2Cu3O10 thin films

D. Schulz, T. Marks, D. Neumayer, 1994 .

In situ growth of epitaxial YAlO[sub 3] thin films by metal-organic chemical vapor deposition

D. Schulz, T. Marks, D. Neumayer, 1993 .

Second phase effect on corrosion of nanostructured Mg-Zn-Ca dual-phase metallic glasses

J. Luan, C. Liu, Ge Wu, 2021 .

Phonon-assisted deep level luminescence in heavily Mg-doped InGaN

B. Wessels, B. Han, M. P. Ulmer, 2004 .

Investigation of deep-level luminescence in In0.07Ga0.93N:Mg

B. Wessels, M. Ulmer, B. Han, 2003 .

In Situ MOCVD of Dielectric Materials for High-Tc Superconducting Devices

T. Marks, D. Neumayer, Bruce H. Goodreau, 1994 .

Suitability of metalorganic chemical vapor deposition‐derived PrGaO3 films as buffer layers for YBa2Cu3O7−x pulsed laser deposition

T. Marks, D. Neumayer, V. Dravid, 1993 .

Transmission electron microscopic characterization of metal-organic chemical vapor deposition-derived superconducting Tl2Ba2Ca1Cu2Oχ thin films on Au substrates

Dean J. Miller, D. Schulz, T. Marks, 1993 .

On the Mechanisms of SiO2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis(t-butylamino)silane on the Hydroxylated SiO2(001) Surface

Hansong Cheng, B. Han, Jinping Wu, 2012 .

Boron distributions in individual core-shell Ge/Si and Si/Ge heterostructured nanowires.

N. Fukata, Y. Shimizu, Y. Nagai, 2016, Nanoscale.

Influence of laser power on atom probe tomographic analysis of boron distribution in silicon.

A. Nishida, Y. Shimizu, F. Yano, 2017, Ultramicroscopy.

Hydrogen adsorption on GaAs (001) reconstructions

Q. Fu, R. Hicks, H. Qi, 1999 .

Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography

A. Nishida, Y. Shimizu, M. Inoue, 2015 .

3D impurity profiles of doped/intrinsic amorphous-silicon layers composing textured silicon heterojunction solar cells detected by atom probe tomography

T. Hashiguchi, Y. Ichihashi, H. Katayama, 2020, Applied Physics Express.

Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures

T. Shinada, Y. Shimizu, Y. Fukui, 2017, Nanotechnology.

Step structure of arsenic-terminated vicinal Ge (100)

D. Law, R. Hicks, M. J. Begarney, 1999 .

EXAMPLE OF A COMPOUND SEMICONDUCTOR SURFACE THAT MIMICS SILICON : THE INP(001)-(2 X 1) RECONSTRUCTION

Q. Fu, R. Hicks, B. Han, 1999 .

A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

Q. Fu, D. Law, R. Hicks, 1999 .

Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors

N. Pan, R. Welser, P. Deluca, 2001 .

The reaction of carbon tetrachloride with gallium arsenide (001)

R. Hicks, Lian Li, H. Qi, 1998 .

Recombination Investigation of InGaP HBT’s

A. Wibowo, B. Han, G. Du, 2004 .

Structure and composition of the c(4×4) reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy

Q. Fu, R. Hicks, Lian Li, 1998 .

Surface phases of GaAs and InAs (001) found in the metalorganic vapor-phase epitaxy environment

R. Hicks, Lian Li, B. Han, 1998 .

In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy

W. Richter, M. Pristovsek, Jh.-T Zettler, 2000 .

Site-Specific Chemistry of Gallium Arsenide Metalorganic Chemical Vapor Deposition

Q. Fu, D. Law, R. Hicks, 1999 .

Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing

Hengjing Tang, Xue Li, Haimei Gong, 2007, SPIE/COS Photonics Asia.

Materials for superconducting electronics: In situ growth of PrGaO3 thin films by metalorganic chemical vapor deposition

D. Schulz, T. Marks, D. Neumayer, 1993 .

Metal-Organic Chemical Vapor Deposition of Epitaxial Tl2Ba2Ca2Cu3O10−x Thin Films

T. Marks, D. Neumayer, B. Hinds, 1993 .

Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography

Koji Inoue, Bin Han, Yasuyoshi Nagai, 2016 .

Density functional theory study on the full ALD process of silicon nitride thin film deposition via BDEAS or BTBAS and NH3.

Hansong Cheng, R. Pearlstein, B. Han, 2014, Physical chemistry chemical physics : PCCP.

Temperature dependence of Raman scattering from 4H-SiC with hexagonal defects

Cuncheng Li, R. Han, Danghui Wang, 2011 .

GaAs MOSFET using InAlP native oxide as gate dielectric

N. Pan, A. Wibowo, P. Fay, 2004, IEEE Electron Device Letters.

Determination of InP(001) surface reconstructions by STM and infrared spectroscopy of adsorbed hydrogen

Q. Fu, R. Hicks, Lian Li, 2000 .

Investigation of nanoscale composition fluctuations in InGaN using optical transmission spectroscopy and near-field scanning optical microscopy

Melville P. Ulmer, Bruce W Wessels, B. Wessels, 2006 .

Blue emission band in compensated GaN:Mg codoped with Si

Bruce W Wessels, J. M. Gregie, B. Wessels, 2003 .