Jun Luo

发表

Role of Carbon Pre-Germanidation Implantation on Enhancing the Thermal Stability of NiGe Films Below 10 nm Thickness

Tianchun Ye, Yaodong Liu, Guilei Wang, 2020 .

Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate

Tianchun Ye, Guilei Wang, Junfeng Li, 2018, Japanese Journal of Applied Physics.

Influence of Polysilicon Deposition Conditions on Advanced 3D NAND

B. Wang, Jun Luo, Guodong Zhang, 2019, ECS Journal of Solid State Science and Technology.

Design and testing of LGAD sensor with shallow carbon implantation

G. Kramberger, Zhijun Liang, Junfeng Li, 2022, 2205.05025.

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

J. Bi, Jinbiao Liu, H. Yin, 2022, Advanced Materials Interfaces.

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Jun Luo, Xianglie Sun, Shuliang Lv, 2019, ECS Journal of Solid State Science and Technology.

First-principles study of oxygen vacancy defects in orthorhombic Hf0.5Zr0.5O2/SiO2/Si gate stack

K. Han, Wenwu Wang, Shujing Zhao, 2022, Journal of Applied Physics.

Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs

H. Yin, Wenwu Wang, Qingzhu Zhang, 2022, Nanoscale research letters.

Different correlations between spin Hall angle measured by the 2nd harmonic method and by the critical current density due to dimension effect in W/Ta multilayers

Jianfeng Gao, Wenwu Wang, B. Cui, 2022, Journal of Magnetism and Magnetic Materials.

Design and testing of LGAD sensor with shallow carbon implantation

G. Kramberger, Zhijun Liang, J. G. D. da Costa, 2022, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

A stacked high-Ge-concentration SiGe/Ge multilayer on a novel Ge + SiGe SRB structure for the gate-all-around MOSFETS

Tianchun Ye, Wenwu Wang, Yongliang Li, 2022, Journal of Materials Science: Materials in Electronics.

Ultradense One-Memristor Ternary-Content-Addressable Memory Based on Ferroelectric Diodes

Tianchun Ye, H. Yin, Wenwu Wang, 2023, IEEE Electron Device Letters.

A Novel 3D NOR Flash With Single-Crystal Silicon Channel: Devices, Integration, and Architecture

Junfeng Li, Huilong Zhu, Wenwu Wang, 2022, IEEE Electron Device Letters.

Effectiveness of Repairing Hot Carrier Degradation in Si p-FinFETs Using Gate Induced Drain Leakage

A. Du, Junfeng Li, H. Yin, 2023, IEEE Electron Device Letters.

Investigation of ultrathin yttrium silicide for NMOS source/drain contacts

Tianchun Ye, Jianfeng Gao, Jinbiao Liu, 2023, Journal of Materials Science: Materials in Electronics.

A Refined Ladder Transmission Line Model for the Extraction of Significantly Low Specific Contact Resistivity

Tianchun Ye, Jianfeng Gao, Jinbiao Liu, 2023, IEEE Transactions on Electron Devices.

4-Levels Vertically Stacked SiGe Channel Nanowires Gate-All-Around Transistor with Novel Channel Releasing and Source and Drain Silicide Process

H. Yin, Wenwu Wang, Qingzhu Zhang, 2022, Nanomaterials.

Key Process Technologies for Stacked Double Si0.7Ge0.3 Channel Nanowires Fabrication

Guilei Wang, H. Yin, Wenwu Wang, 2020 .

Very-large-scale integrated quantum graph photonics

J. O'Brien, R. Santagati, J. Silverstone, 2023, Nature Photonics.

Scalable high Q-factor Fano resonance from air-mode photonic crystal nanobeam cavity

Kai Huang, Fujun Sun, Peng Zhang, 2023, Nanophotonics.

Low Gain Avalanche Detectors with good time resolution developed by IHEP and IME for ATLAS HGTD project

Zhijun Liang, J. G. D. da Costa, Junfeng Li, 2021, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment.

Investigation on thermal stability of Si0.7Ge0.3/Si stacked multilayer for gate-all-around MOSFETS

Guilei Wang, Wenwu Wang, Z. Kong, 2020, Semiconductor Science and Technology.

Process optimization of the Si0.7Ge0.3 Fin Formation for the STI first scheme

A. Du, Guilei Wang, Junfeng Li, 2019, Semiconductor Science and Technology.

Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process

R. Chen, Jianfeng Gao, Guilei Wang, 2023, Nanomaterials.

Spin Logic Operated by Unipolar Voltage Inputs

Jianfeng Gao, Junfeng Li, Meiyin Yang, 2022, IEEE Electron Device Letters.

Investigation of Fabricated CMOS FishboneFETs and TreeFETs With Strained SiGe Nano-Fins on Bulk-Si Substrate

Jianfeng Gao, Xiaobin He, Lei Cao, 2023, IEEE Electron Device Letters.

Improving Driving Current with High-Efficiency Landing Pads Technique for Reduced Parasitic Resistance in Gate-All-Around Si Nanosheet Device

Guilei Wang, Lei Cao, Jinbiao Liu, 2022, ECS Journal of Solid State Science and Technology.

Hybrid integrated Si nanosheet GAA-FET and stacked SiGe/Si FinFET using selective channel release strategy

Xiaofeng Jia, H. Luo, Yongliang Li, 2023, Microelectronic Engineering.

Leakage Reduction of GAA Stacked SI Nanosheet CMOS Transistors and 6T-SRAM Cell Via Spacer Bottom Footing Optimization

Lei Cao, H. Yin, Qingzhu Zhang, 2023, China Semiconductor Technology International Conference.

Record 7(N)+7(P) Multiple VTs Demonstration on GAA Si Nanosheet n/pFETs using WFM-Less Direct Interfacial La/Al-Dipole Technique

Lei Cao, Junfeng Li, H. Yin, 2022, 2022 International Electron Devices Meeting (IEDM).

Temperature response of non-hysteresis magnetic switching by electrical current

Meiyin Yang, Jun Luo, Yanru Li, 2022, Journal of Materials Science: Materials in Electronics.

Manipulation of Synthetic Antiferromagnetic Skyrmion by Reduced Voltage via Design of Double Interface Structure

Yongliang Li, Jun Luo, Peiyue Yu, 2024, IEEE Electron Device Letters.