Yao-Jen Lee

Phase-separation phenomenon of NiGePt alloy on n-Ge by microwave annealing

G. Luo, C. Chien, Kun‐Lin Lin, 2018 .

SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers

G. Luo, C. Chu, Chun-Hsiung Lin, 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Ti supersaturated Si by microwave annealing processes

T. Chao, I. Mártil, J. Olea, 2022, Semiconductor Science and Technology.

Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

G. Luo, C. Chien, Yi-He Tsai, 2015, Materials.

Investigation on selectively etched SiGe and Si surface for Gate-All-Around CMOS devices fabrication

P. Sung, G. Luo, W. Yeh, 2022, 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

A Low-Temperature Microwave Anneal Process for Boron-Doped Ultrathin Ge Epilayer on Si Substrate

J. M. Kowalski, G. Luo, Shih-Chiang Huang, 2009, IEEE Electron Device Letters.