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Full adder operation based on Si nanodot array device

Hiroshi Inokawa, Akira Fujiwara, Yasuo Takahashi, 2009, 2008 IEEE Silicon Nanoelectronics Workshop.

Si Nanodot Device Fabricated by Thermal Oxidation and their Applications

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2011 .

Fabrication and evaluation of series-triple quantum dots by thermal oxidation of silicon nanowire

Yasuo Takahashi, A. Fujiwara, M. Arita, 2015 .

Capacitance evaluation of compact silicon triple quantum dots by simultaneous gate voltage sweeping

Yasuo Takahashi, A. Fujiwara, M. Arita, 2016 .

Evaluation of serially coupled triple quantum dots with a compact device structure by a simultaneous voltage-sweeping method

A. Fujiwara, Y. Takahashi, M. Arita, 2016, 2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO).

Fabrication of double-dot single-electron transistor in silicon nanowire

Yasuo Takahashi, H. Inokawa, A. Fujiwara, 2009, SDM 2009.

Silicon nanodot-array device with multiple gates

Hiroshi Inokawa, Yasuo Takahashi, Kenji Yamazaki, 2008 .