M. Leonard

Gain characteristics of InGaN/GaN quantum well diode lasers

A. Nurmikko, S. Sheppard, M. Kuball, 1998 .

Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates

R. Davis, W. Shan, G. Bulman, 1996 .

Strain determination in heteroepitaxial GaN

R. Molnar, G. Bulman, B. Skromme, 1997 .

Gain characteristics of InGaN/GaN quantum well diode lasers

S. Sheppard, K. Doverspike, M. Kuball, 1998, Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178).

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

W. C. Hughes, J. Zavada, J. Schetzina, 1997 .

Nitride-Based Emitters on SiC Substrates

Vladimir A. Dmitriev, Gary E. Bulman, Hua-Shuang Kong, 1997, Photonics West.

Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures

W. Shan, G. Bulman, H. Kong, 1997 .

Photoluminescence, reflectance, and magnetospectroscopy of shallow excitons in GaN

S. Pearton, C. Abernathy, G. Bulman, 1997 .