K. Nishikata

Attenuator integrated waveguide photodetectors (AIPD) with variable sensitivity range of 11 dB

J. Yoshida, N. Yokouchi, N. Yamanaka, 1998, IEEE Photonics Technology Letters.

Structural dependence of 1.3-/spl mu/m narrow-beam lasers fabricated by selective MOCVD growth

A. Kasukawa, N. Iwai, T. Mukaihara, 1997 .

Molecular-beam-epitaxy growth of strained Ga1−x InxAs/AlInAs/InP and application to 1.55 μm multi-quantum-well lasers

H. Shimizu, M. Irikawa, Y. Hirayama, 1995 .

Structural studies of Al/Si(111) surfaces by LEED

M. Yoshimura, A. Kawazu, K. Nishikata, 1992 .

Low threshold 1.3 /spl mu/m InAsP MQW lasers using n-type modulation doping grown by gas-source molecular-beam epitaxy

A. Kasukawa, H. Shimizu, N. Iwai, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).

Strained GaInAs-AlGaInAs 1.5-/spl mu/m-wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum barriers at the p-side optical confinement layer

H. Shimizu, M. Irikawa, Y. Hirayama, 1995 .