Yangyang Gao

Epitaxial growth of ε-(AlGa)2O3 films on sapphire substrate by PLD and the fabrication of photodetectors

Y. Hao, Z. Jia, Q. Feng, 2021 .

Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

Y. Hao, Q. Feng, Chunfu Zhang, 2018, IEEE Electron Device Letters.

Lateral $\beta$ -Ga2O3 Schottky Barrier Diode on Sapphire Substrate With Reverse Blocking Voltage of 1.7 kV

Y. Hao, Q. Feng, Jincheng Zhang, 2018, IEEE Journal of the Electron Devices Society.

Synthesis of n-type ZrO2 doped ε-Ga2O3 thin films by PLD and fabrication of Schottky diode

Q. Feng, Chunfu Zhang, Jincheng Zhang, 2021, Journal of Alloys and Compounds.

High-Voltage β-Ga2O3 Schottky Diode with Argon-Implanted Edge Termination

Y. Hao, Z. Jia, Q. Feng, 2019, Nanoscale Research Letters.

Tuning electronic properties in tin-assisted n-type ε-Ga2O3:Zr thin films via PLD for p-n heterojunction

Q. Feng, Chunfu Zhang, Jincheng Zhang, 2023, Applied Surface Science.

Impacts of oxygen source on band alignment of ALD Al2O3/(α-, ε-)Ga2O3 interface

Y. Hao, Q. Feng, Chunfu Zhang, 2021, Journal of Crystal Growth.