C. Lin

Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well

Chih-Wen Liu, Huang-Siang Lan, Hung-Yu Ye, 2018, Optical Materials Express.

Electroluminescence from the Ge quantum dot MOS tunneling diodes

M. Liao, T. Guo, C. Liu, 2006, IEEE Electron Device Letters.

InP-based high speed digital logic gates using an RTD/HBT heterostructure

G. Haddad, P. Mazumder, J. East, 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

Enhanced reliability of electroluminescence from metal–oxide–silicon tunneling diodes by deuterium incorporation

Chih-Wen Liu, Miin-Jang Chen, Ching-Fuh Lin, 2001 .

Closed-form partitioned gate tunneling current model for NMOS devices with an ultra-thin gate oxide

J. Kuo, C. Lin, Cheng‐Ming Lin, 2009 .

Novel methods to incorporate deuterium in the MOS structures

M. Lee, C. Liu, C. Lin, 2001, IEEE Electron Device Letters.

Novel transport mechanism of SiGe dot MOS tunneling diodes

C. Peng, P. Kuo, C. Liu, 2007, 2007 7th IEEE Conference on Nanotechnology (IEEE NANO).

Correlation between Si–H/D bond desorption and injected electron energy in metal–oxide–silicon tunneling diodes

Chih-Wen Liu, M. H. Lee, C. Lin, 2001 .

Novel MIS Ge-Si quantum-dot infrared photodetectors

P. Chen, C. Kuan, S. Chang, 2004, IEEE Electron Device Letters.

Transport Mechanism of SiGe Dot MOS Tunneling Diodes

C. Peng, P. Kuo, C. Liu, 2007, IEEE Electron Device Letters.

Roughness-enhanced reliability of MOS tunneling diodes

M. Lee, W. Pai, B. Hsu, 2002, IEEE Electron Device Letters.