M. Spasova

Study of p-type FinFETs’ Parameter Variability Depending on Wafer Location

D. Nikolov, G. Angelov, R. Rusev, 2019, 2019 IEEE XXVIII International Scientific Conference Electronics (ET).

DRAM design based on carbon nanotube field effect transistors

Marin Hristov, Mariya Spasova, George Angelov, 2016, 2016 39th International Spring Seminar on Electronics Technology (ISSE).

Simulation of 1T DRAM Memory Cell with Verilog-A Model of CNTFET in Cadence

George Angelov, M. H. Hristov, Mariya Spasova, 2012 .

Energy Harvesting System Model Based on Reverse Electrowetting

Mariya Spasova, George Angelov, Dimitar Nikolov, 2019, 2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems".

Study of Process Variability-Sensitive Local Device Parameters for 14-nm Bulk FinFETs

D. Nikolov, G. Angelov, R. Rusev, 2020, Information Security Solutions Europe.

Extraction of Model Parameters for 14-nm Bulk FinFET

D. Nikolov, I. Ruskova, G. Angelov, 2018, 2018 41st International Spring Seminar on Electronics Technology (ISSE).

Impact of Energy Band Structure on CNTFET Output Characteristics

D. Nikolov, M. Hristov, G. Angelov, 2015 .