T. Kubota

Estimation of Interface and Oxide Defects in Direct Contact High-k/Si Structure by Conductance Method

H. Iwai, T. Kubota, 2011 .

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

H. Iwai, T. Hattori, N. Sugii, 2011 .

Silicate Reaction Control at Lanthanum Oxide and Silicon Interface for Equivalent Oxide Thickness of 0.5 nm: Adjustment of Amount of Residual Oxygen Atoms in Metal Layer

H. Iwai, T. Hattori, N. Sugii, 2011 .

Total Performance of 32-nm-Node Ultralow-$k$ /Cu Dual-Damascene Interconnects Featuring Short-TAT Silylated Porous Silica $(k = \hbox{2.1})$

S. Saito, N. Oda, S. Chikaki, 2010, IEEE Transactions on Electron Devices.