E. Nishimura

Development of High Performance ASV-LCDs Using Continuous Pinwheel Alignment (CPA) Mode

T. Miyashita, Masumi Kubo, Nobuyoshi Nagashima, 2001 .

Bias Annealing of Radiation and Bias Induced Positive Charges in N- and P-Type MOS Capacitors

M. Sakagami, Kikuo Watanabe, Kazumichi Suzuki, 1985, IEEE Transactions on Nuclear Science.

Cryogenic etching processes applied to porous low-k materials using SF6/C4F8 plasmas

P. Lefaucheux, R. Dussart, T. Tillocher, 2015 .

Negative Ions in 13.56 MHz Discharge of SF6 Gas in a Planar Diode

E. Nishimura, Yukinori Saito, I. Ishikawa, 1995 .

Mass spectrometry of discharge products at 13.56 MHz in SF6 gas

Hidehiko Kobayashi, Eiichi Nishimura, Itsuo Ishikawa, 1994 .

STT MRAM patterning challenges

Vasile Paraschiv, W. Boullart, Eiichi Nishimura, 2013, Advanced Lithography.

Mass Spectrometric Observation of Decomposition Products SFx (x=1, 2) in SF6 Discharge at 13.56 MHz

E. Nishimura, I. Ishikawa, Yukinori Saito Yukinori Saito, 1993 .

Direct etched Cu characterization for advanced interconnects

K. Croes, F. Lazzarino, J. Bommels, 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

Fabrication of Silicon Pillar with 25 nm Half Pitch Using New Multiple Double Patterning Technique

T. Endoh, E. Nishimura, A. Hara, 2011 .