Tak H. Ning

发表

2008 International Symposium on VLSI Design, Automation, and Test Organization

Youn-Long Lin, Jing-Yang Jou, Morris Chang, 2008 .

FEOL technology trend

Yuan Taur, Tak H. Ning, 1998 .

History and future perspective of the modern silicon bipolar transistor

Tak H. Ning, T. Ning, 2001 .

GLSVLSI 2008 invited/keynote talk

Tak H. Ning, 2008, ACM Great Lakes Symposium on VLSI.

Directions for silicon technology as we approach the end of CMOS scaling

Tak H. Ning, 2008, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology.

A perspective on the theory of MOSFET scaling and its impact

Tak H. Ning, 2007, IEEE Solid-State Circuits Newsletter.

History, Present Trends, and Scaling of Silicon Bipolar Technology

Tak H. Ning, 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

0.25 /spl mu/m low power CMOS devices and circuits from 8 inch SOI materials

Ghavam G. Shahidi, Tak H. Ning, R. Schulz, 1995, Proceedings of 4th International Conference on Solid-State and IC Technology.

CMOS scaling in the 0.1-µm, 1.X-volt regime for high-performance applications

Tak H. Ning, Robert H. Dennard, James D. Warnock, 1995, IBM Journal of Research and Development.

Session 8 Integrated circuitsAdvanced bipolar integrated circuits

Tak H. Ning, 1979 .

On Shockley's 1952 Proceedings Of The IRE Paper

Tak H. Ning, 1997 .

Session 15 Integrated circuits—Bipolar integrated circuits

Tak H. Ning, 1980 .

Directions for silicon technology as we approach the end of CMOS scaling

Tak H. Ning, 2010 .

SOI for a 1-volt CMOS technology and application to a 512 Kb SRAM with 3.5 ns access time

Tak H. Ning, Peter W. Cook, Stanley E. Schuster, 1993, Proceedings of IEEE International Electron Devices Meeting.

CMOS performance and density trends as we approach 0.1 /spl mu/m

Tak H. Ning, 1998, 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105).

A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems

Tak H. Ning, T. Ning, 2016, IEEE Journal of the Electron Devices Society.

Future directions for CMOS device technology development from a system application perspective

Tak H. Ning, 2007, SPIE Advanced Lithography.

Why BiCMOS and SOI BiCMOS

Tak H. Ning, T. Ning, 2002 .

Advancing the state of the art in high-performance logic and array technology

Tak H. Ning, Karen H. Brown, Paul A. Totta, 1992, IBM J. Res. Dev..

Silicon VLSI Technology Trends

Tak H. Ning, 1992, Thirteenth IEEE/CHMT International Electronics Manufacturing Technology Symposium.

The Future of CMOS -- Limits and Opportunities

Tak H. Ning, 2007 .

Fundamentals of Modern VLSI Devices

Yuan Taur, Tak H. Ning, Y. Taur, 1998 .

Trends in CMOS technology and application development

Tak H. Ning, 1997 .

A room temperature 0.1 /spl mu/m CMOS on SOI

Tak H. Ning, James D. Warnock, R. L. Franch, 1994 .

A subnanosecond 5-kbit bipolar ECL RAM

Ching-Te Chuang, Tak H. Ning, D. D. Tang, 1988 .

1 pm MOSFET VLSI Technology: Part lV— Hot-Electron Design Constraints

Tak H. Ning, Peter W. Cook, Stanley E. Schuster, 1979 .

Epitaxial-base double-poly self-aligned bipolar transistors

John D. Cressler, Tak H. Ning, Bernard S. Meyerson, 1990, International Technical Digest on Electron Devices.

Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors

Tak H. Ning, Massimo V. Fischetti, Evgeni P. Gusev, 2003 .

On the Base Current Components in SOI Symmetric Lateral Bipolar Transistors

Tak H. Ning, Jin Cai, Jeng-Bang Yau, 2016, IEEE Journal of the Electron Devices Society.

A Perspective on Symmetric Lateral Bipolar Transistors on SOI as a Complementary Bipolar Logic Technology

Tak H. Ning, Jin Cai, T. Ning, 2015, IEEE Journal of the Electron Devices Society.

A 27 GHz 20 ps PNP technology

Keith A. Jenkins, Ching-Te Chuang, John D. Cressler, 1989, International Technical Digest on Electron Devices Meeting.

Substrate-Voltage Modulation of Currents in Symmetric SOI Lateral Bipolar Transistors

Tak H. Ning, Jin Cai, Jeng-Bang Yau, 2016, IEEE Transactions on Electron Devices.

High‐field capture of electrons by Coulomb‐attractive centers in silicon dioxide

Tak H. Ning, T. Ning, 1976 .

Complementary thin-base symmetric lateral bipolar transistors on SOI

Tak H. Ning, Jin Cai, Wilfried E. Haensch, 2011, 2011 International Electron Devices Meeting.

Emission probability of hot electrons from silicon into silicon dioxide

Tak H. Ning, Carlton M. Osburn, T. Ning, 1977 .

Thermal reemission of trapped electrons in SiO2

Tak H. Ning, T. Ning, 1978 .

A self-aligned inverse-T gate fully overlapped LDD device for sub-half micron CMOS

Yuan Taur, Tak H. Ning, Matthew R. Wordeman, 1989, International Technical Digest on Electron Devices Meeting.

SOI for Low-Voltage and High-Speed CMOS

Tak H. Ning, Ghavam G. Shahidi, Robert H. Dennard, 1994 .

Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxide

Tak H. Ning, Carlton M. Osburn, T. Ning, 1976 .

Summary Abstract: Materials and physics issues in scaling bipolar devices

Tak H. Ning, T. Ning, 1987 .

A simulation study on thin SOI bipolar transistors with fully or partially depleted collector

Tak H. Ning, Jin Cai, Jeffrey B. Johnson, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

Electron trapping at positively charged centers in SiO2

Tak H. Ning, Carlton M. Osburn, T. Ning, 1975 .

The Potential of Bipolar Devices for VLSI

Tak H. Ning, 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers.

Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors

Ching-Te Chuang, John D. Cressler, Tak H. Ning, 1991 .

Electron trapping in SiO2 due to electron‐beam deposition of aluminum

Tak H. Ning, T. Ning, 1978 .

On the Device Design and Drive-Current Capability of SOI Lateral Bipolar Transistors

Tak H. Ning, Jin Cai, Ramachandran Muralidhar, 2014, IEEE Journal of the Electron Devices Society.