J. Mäkinen

发表

Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

L. Worschech, W. Ossau, A. Waag, 1996 .

Near‐surface disorder studied with slow positrons

A. Vehanen, P. Hautojärvi, J. Mäkinen, 1987 .

Vacancy-type defect distributions near argon sputtered Al(100) surface studied by variable-energy positrons and molecular dynamics simulations

A. Vehanen, R. Nieminen, S. Valkealahti, 1986 .

High-intensity variable-energy positron beam for surface and near-surface studies

A. Vehanen, P. Hautojärvi, M. Bentzon, 1986 .

Defect formation in implantation of crystalline Si by MeV Si ions

A. Vehanen, J. Keinonen, M. Hautala, 1990 .

Positron annihilation and the charge states of the phosphorus-vacancy pair in silicon

P. Hautojärvi, C. Corbel, J. Mäkinen, 1992 .

Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs

R. Newman, P. Hautojärvi, K. Saarinen, 1997 .

Thin films for slow positron generation

A. Vehanen, J. Mäkinen, 1985 .

Point defects in III–V materials grown by molecular beam epitaxy at low temperature

P. Hautojärvi, K. Saarinen, C. Corbel, 1993 .

Vacancy-Type Defects in Ion-Implanted Si Studied By Slow Positron Beam

A. Vehanen, E. Punkka, J. Mäkinen, 1987 .

Vortex-bound solitons in topological superfluid 3He

Kuang Zhang, V. Eltsov, J. Mäkinen, 2022, Journal of physics. Condensed matter : an Institute of Physics journal.

Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP.

Saarinen, P. Hautojärvi, Alatalo, 1995, Physical review. B, Condensed matter.